Abstract:By using sol-gel spin coating method nanostructured Pb(Zr0.53Ti0.47)O3(PZT) ferroelectric thin films were fabricated on the Si substrates coated by nanoporous alumina membranes with average pore sizes of 20-100nm,in which metal(Au or Pt)nanowires were embedded as a part of the bottom electrode.The dielectric,ferroelectric properties and microstructure of the nanostructured PZT thin films were characterized.The dielectric measurements demonstrated that the dielectric constant of the PZT nanofilms with a thickness of 25nm decreased quickly from 860 to 100 as increasing the frequency below 104 Hz,and then remained almost constant of 100 as further increasing the frequency up to 106 Hz.Such a fast decrease of the dielectric constant in the low frequency region was resulted from the dielectric relaxation of space charges accumulated at the interfaces between the nanofilm and the(bottom and top)metal electrodes.The dielectric loss peak observed near 4000Hz was contributed from the resonant absorption effect of the space charges.The polarization-electric field hystere-sis loops of the nanostructured PZT films with a thickness 100nm showed that the remanent polarization of the PZT nanofilm was 50μC/cm2 and coercive field of 500kV/cm.Cross-sectional TEM images showed that the nanostructured PZT films contacted directly with the bottom electrode(metal nanowires),and the interface between them exhibited some degree of waviness.It was found that some Au nanowires became into branches at their ends after post-annealing the PZT nanofilms,whereas such a phenomenon was effectively prohibited by using Pt nanowires.A selection of proper post-annealing temperature was the critical processing parameter for fabricating nanostructured PZT ferroelectric thin films as making a trade-off between the ordered metal nanowires within the nanoporous alumina membranes and the crystallinity of ferroelectric nanofilms.

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Growth behavior,dielectric property and microstructure of PZT nanofilms

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Fabrication of (100) Orientated PZT Thin Films for MEMS Applications

Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing

Fabrication of Nanostructured PZT Ferroelectric Thin Films and Their Characterization

Epitaxial growth of (PbZr)TiO3 films on LaAlO3 by sol-gel method using inorganic zirconium source

Fabrication And Etching Processes Of Silicon-Based Pzt Thin Films

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Thickness-dependent structural characteristics of sol–gel-derived epitaxial (PbZr)TiO3 films using inorganic zirconium salt

Sol–gel synthesis and characterization of PZT thin films on FTO/aluminoborosilicate glass substrates

Study of Fabrication and Etching Processes of PZT Thin Films on Silicon

Oriented Growth In Pzt Thin Films