Abstract:Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) thin films were grown on Si (100) and Pt(111)/Ti/SiO2/Si(100) substrates by a new reverse dip-coating method of sol–gel process. The method was first proposed and applied to coat films. It has several advantages over the conventional sol–gel coating method, including: no consideration of the mechanical transmission that is difficult to manipulate with costly exact apparatus in classical dip-coating procession, convenient processing control, simplicity, low cost, less pollution, and easy fabrication films on large areas and irregular shaped devices etc. This paper studied the factors including PbO content of precursor, TiO2 and ZrO2 layers, which are related to raw materials of PZT precursor and influence greatly the crystal orientation of the final thin films. We find that the PZT films deposited by precursor with 20% mole excess Pb displayed strong (111) preferred orientation, with 5% mole excess Pb showed a little (100) orientation and pyrochlore phase. The precursor with 10% mole excess Pb was found prompting the PZT films phase transformation with (110) preferred orientation. In addition, the results show that the TiO2 and ZrO2 seeding layers had totally different effects on the preferred orientation of PZT films. The films with TiO2 seeding layer were highly (111) oriented and exhibited better ferroelectric properties (remnant polarization Pr=14.2 μC cm−2, coercive field Ec=59.1 Kv cm−1) than those of the films with ZrO2 seeding layer shown (100) orientation (Pr=7.4 μC cm−2, Ec=42.9 Kv cm−1).

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films

Preferred orientation controlling of PZT (52–48) thin films prepared by sol–gel process

Investigation on the Effects of PbO Content and Seeding Layers of TiO2 and ZrO2 on the Orientation and Microstructure of Pb(Zr0.52Ti0.48)O3 Ferroelectric Films Grown by Reverse Dip-Coating Method of Sol–gel

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Fabrication and Characterization of Sol–Gel Derived (100)‐textured (pb0.97la0.02)(zr0.95ti0.05)o3 Thin Films

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Highly (100)-Textured Pb(Zr0.52Ti0.48)O3 Film Derived from a Modified Sol–gel Technique Using Inorganic Zirconium Precursor

The Preparation and Characterization of the PZT Thin Film with (100) Peak Preferred Orientation

Synthesis and electrical properties of Pb(Zr 0.52 Ti 0.48 )O 3 thick films embedded with ZnO nanoneedles prepared by the hybrid sol–gel method

Preparation and Characterization of Pb(ZrxTi1-x)O3 Thin Film on Indium Tin Oxide

Oriented Growth In Pzt Thin Films

Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

The Annealing Induced Extraordinary Properties of SI Based ZNO Film Grown by RF Sputtering

Enhanced Ferroelectric Properties of Highly (100) Oriented Pb(Zr0.52ti0.48)O-3 Thick Films Prepared by Chemical Solution Deposition

Growth and electrical properties of Pb(Zr,Ti)O3 thin films by a chemical solution deposition method using zirconyl heptanoate as zirconium source

Enhanced electrical properties of Pb(Zr0.80Ti0.20)O3 thick films prepared by a modified sol–gel technique

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films