Abstract:(Pb-x,Sr1-x)(0.85)Bi0.1TiO3 thin films with perovskite structure were prepared on ITO glass substrate by a sol-gel method. XRD, SEM and impedance analyzer were respectively used to characterize the phase status, morphology and dielectric properties of the films. The results show that during the formation of (Pbx, Sr1-x)(0.85)Bi0.1TiO3 thin films, nucleus of the perovskite phase are initially formed and then congregated together. These aggregated nucleus are then transformed as the perovskite-phase crystalline. And finally, the crystalline phase grows and separates gradually to form the perfect crystalline structure. The content of the perovskite phase formed in the thin film under rapid thermal process(RTP) is more than that formed in kinetic equilibrium under traditional heat treatment. It is due to the high active decomposed ions forming the perovskite phase directly when heat-treated by RTP. The structure of the perovskite phase has a close relation to the ratio of Pb/Sr in the system because of the difference of radius between Pb2+ and Sr2+. The transformation temperature between cubic and tetragonal of the perovskite phase is increased as increasing Pb2+ whose radius is larger than that of Sr2+. It appears at room temperature when the content of Pb2+ / Sr2+ is about 0.4/0.6. Meanwhile, the tetragonality of the perovskite phase is increased with increasing Pb2+ ions. High tunability of the (Pb-x, Sr1-x)(0.85)Bi0.1TiO3 thin film is exhibited when the film composition is close to transformation point between paraelectric and ferroelectric. Pb2+ ions act as a dominant factor to affect the Curie point of the system and then to change tunability.

Effect of PbO seeding layers on the structure and properties of the sol-gel-derived BiScO3-PbTiO3 thin films

Investigation of Thickness Dependence of Structure and Electric Properties of Sol-Gel-Derived BiScO3-PbTiO3 Thin Films: Investigation of Properties of BiScO3-PbTiO3 Thin Films

Structure and Electrical Properties of (100)-Oriented BiSc1/2Fe1/2O3–PbTiO3 Thin Films with Different Thickness Via Sol–gel Method

Fabrication and Properties of Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

Investigation Of Thickness Dependence Of Structure And Electric Properties Of Sol-Gel-Derived Bisco3-Pbtio3 Thin Films

Epitaxial Growth of Sol-Gel Derived BiScO3–PbTiO3 Thin Film on Nb-doped SrTiO3 Single Crystal Substrate

Fabrication and Characterization of High Curie Temperature BiSc1/2Fe1/2O3–PbTiO3 Piezoelectric Films by a Sol–gel Process

Characterization of (100)-Oriented BiScO3–PbTiO3 Thin Films Synthesized by a Modified Sol-Gel Method

Properties of Compositionally Graded BiScO3–PbTiO3Thin Films Fabricated by a Sol–Gel Process

Orientation Control in Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

Influence of Pb on the structure and dielectric properties of (Pb-x,Sr1-x)(0.85)Bi0.1TiO3 thin films

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Fabrication and Properties of Epitaxial Growth BiScO3–PbTiO3 Thin Film Via a Hydrothermal Method

Effects of LiNbO3 Doping on the Microstructures and Electrical Properties of BiScO3–PbTiO3 Piezoelectric System

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Preparations and Dielectric Properties of Ba0.80Sr0.20TiO3/PbO–B2O3 Thick Films

Structural Characterization and Dielectric Properties of Sol-Gel Synthesized Bisco3-0.64pbtio3 Ceramics

Investigation of Thickness Dependence of Electric Properties of Sol-Gel Bnt-Bt Thin Films with Stepwise Crystallization

Preferred orientation controlling of PZT (52–48) thin films prepared by sol–gel process

Synthesis and Structure of Sol-Gel Derived Pst/Bi2ti2o7 Composite Thin Films

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films