Abstract:Temperature scaling of dynamic ferroelectric hysteresis for the morphotropic phase boundary (MPB) compositions in xBiScO(3)-(1-x-y)PbZrO3-yPbTiO(3) (xBS-(1-x-y)PZ-yPT, 0.018 <= x <= 0.264) ternary system was systematically investigated. The power-law relation was obtained for remanent polarization P-r and temperature T, that is, P-r proportional to T-beta. It is interesting to find that the power-law exponent beta could be modulated by BiScO3 content x. With the increase of x from 0.018 to 0.264, beta varies from -1.09398 to 2.44147. Transition of beta from negative to positive produces in the vicinity of 0.054BS-0.476PZ-0.470PT ceramic. At this composition, the magnitude of beta is very close to zero with value of only -0.01567, implying an almost temperature-independent polarization characteristic of the ceramic. Comparing with the conventional PZT-based piezoelectric ceramics that usually with negative exponent beta, when x > 0.054, the xBS-(1-x-y)PZ-yPT ceramics show positive beta value, so that the ferroelectric polarization is enhanced with increasing temperature. Such a positive temperature dependence of ferro-/piezoelectric property makes the ternary system a promising candidate for high-temperature applications.

Characterization of (100)-Oriented BiScO3–PbTiO3 Thin Films Synthesized by a Modified Sol-Gel Method

Characterization of (100)-Oriented 0.63bimg1/2ti1/2o3–0.37pbtio3 Piezoelectric Films by a Sol–gel Process

Fabrication and Properties of Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

Structure and Electrical Properties of (100)-Oriented BiSc1/2Fe1/2O3–PbTiO3 Thin Films with Different Thickness Via Sol–gel Method

Effect of PbO seeding layers on the structure and properties of the sol-gel-derived BiScO3-PbTiO3 thin films

Fabrication and Characterization of High Curie Temperature BiSc1/2Fe1/2O3–PbTiO3 Piezoelectric Films by a Sol–gel Process

Orientation Control in Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

Investigation of Thickness Dependence of Structure and Electric Properties of Sol-Gel-Derived BiScO3-PbTiO3 Thin Films: Investigation of Properties of BiScO3-PbTiO3 Thin Films

Investigation Of Thickness Dependence Of Structure And Electric Properties Of Sol-Gel-Derived Bisco3-Pbtio3 Thin Films

Properties of Compositionally Graded BiScO3–PbTiO3Thin Films Fabricated by a Sol–Gel Process

Fabrication and Properties of Epitaxial Growth BiScO3–PbTiO3 Thin Film Via a Hydrothermal Method

Enhanced Dielectric and Piezoelectric Properties of (100) Oriented Bi0.5Na0.5TiO3–BaTiO3–SrTiO3 Thin Films

Epitaxial Growth of Sol-Gel Derived BiScO3–PbTiO3 Thin Film on Nb-doped SrTiO3 Single Crystal Substrate

Fabrication and Properties of High Curie Temperature Xbizn1/2ti1/2o3–(1−x)pbtio3 Piezoelectric Films by a Sol–Gel Process

Structure and Dielectric Properties of Highly (100)-Oriented PST Thin Films Deposited on MgO Substrates

Manipulation of phase transitions and electrical properties of Ba<sub>1-x</sub>Sr<sub>x</sub>TiO<sub>3</sub> thin films through orientation engineering

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

Effect of Crystal Orientation on the Phase Diagrams, Dielectric and Piezoelectric Properties of Epitaxial BaTiO3 Thin Films

Orientation dependence of the dielectric and piezoelectric properties for the Ba 0.98 Ca 0.02 Ti 0.96 Sn 0.04 O 3 thin films

Orientation Dependence on Piezoelectric Properties of Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 Epitaxial Thin Films

Transition in temperature scaling behaviors and super temperature stable polarization in BiScO<sub>3</sub>-PbZrO<sub>3</sub>-PbTiO<sub>3</sub> system