Characterization of (100)-Oriented 0.63bimg1/2ti1/2o3–0.37pbtio3 Piezoelectric Films by a Sol–gel Process

Caifu Zhong,Xiaohui Wang,Limin Guo,Longtu Li

DOI: https://doi.org/10.1016/j.tsf.2015.03.009

IF: 2.1

2015-01-01

Thin Solid Films

Abstract:0.63BiMg1/2Ti1/2O3–0.37PbTiO3 (BMT–PT) thin films with thickness of 600nm were synthesized on Pt(111)/Ti/SiO2/Si(111) substrates. Highly (100) preferential orientation of the BMT–PT thin films was obtained by introducing lead oxide seeding layers. Saturated polarization hysteresis loops with low leakage current were observed, showing a remanent polarization of 24μC/cm2 and a coercive field of 54kV/cm for the (100)-oriented BMT–PT thin films. The dielectric constant and loss for the thin films were 1060 and 0.06, respectively. The Curie temperature appeared at 415°C. The local effective piezoelectric coefficient d33⁎ was approximately 90pm/V at zero volt for films with (100) preferential orientation, which was much higher than the value (~50pm/V) obtained from films with random orientation.