Microstructure And Ferroelectric Properties Of Sol-Gel Derived Bi3.15nd0.85ti3o12 Thin Films On Pt/Ti/Sio2/Si(100)

Jh Li,Y Qiao,Xl Liu,Cj Nie,Cj Lu,Zx Xu,Sm Wang,Nx Zhang,D Xie,Hc Yu,Jq Li
DOI: https://doi.org/10.1063/1.1803913
IF: 4
2004-01-01
Applied Physics Letters
Abstract:Bi3.15Nd0.85Ti3O12 (BNdT) thin films were deposited on Pt/Ti/SiO2/Si Substrates using a sol-gel process. The film annealed at 750degreesC is composed of grains of 50-100 nm in diameter. The fine grains show nearly random orientations. "Micropores" were frequently observed at the junctions of the grains and they are mostly amorphous, while sometimes containing very fine crystalline particles with sizes of only a few nanometers. The BNdT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization and the coercive field were in the range of 41-43 muC/cm(2) and 70-84 kV/cm, respectively. The BNdT capacitors did not show any significant fatigue up to 5 X 10(9) switching cycles at a frequency of 1 MHz. (C) 2004 American Institute of Physics.
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