Abstract:Ferroelectric capacitors having sputtered Pt bottom and top electrodes and metalorganic decomposition derived ferroelectric thin films of SrBi2Ta2O9 (SBT) were prepared. The thickness effects on the structure, surface morphology, and electrical properties of SBT thin films were studied and discussed. Structure and surface morphology were analyzed by x-ray diffraction and atomic force microscope. The electrical properties were characterized by the measurements of hysteresis, capacitance, and pulse switching. The crystalline structure, grain size, and electrical properties do not depend on film thickness when films are less than 440 nm thick. A larger grain size is observed for films thicker than 440 nm, which results in a larger remnant polarization. The thickness dependence of the coercive voltage and reciprocal capacitance can be explained by an interfacial layer model. The thickness-independent coercive field and dielectric constant, calculated from the interfacial layer model, are around 19 kV/cm and 343, respectively. Nonvolatile polarization (Pnv), obtained from pulse-switching measurements, increases with the applied electric field and finally saturates with a slight thickness effect. The relaxation of the remnant polarization that occurs at zero-voltage intervals between the pulses and the thickness-independent behavior of Pnv are explained based on depolarization fields within the ferroelectric due to nonswitching interfacial layers at the film/electrode interfaces.

0.75SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-0.25Bi<sub>3</sub>TiTaO<sub>9</sub> Layered Structural Thin Films: Microstructure and Ferroelectric Properties

0.75Srbi2ta2o9-0.25Bi3titao9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties

Thin Films of Layered-Structure (1-x)SrBi2Ta2O9-xBi3TiTaO9 Solid solution for Ferroelectric Random Access Memory Devices

Fabrication and Properties of SrBi<sub>2</sub>(Ta<sub>1-x</sub>Nb<sub>x</sub>)<sub>2</sub>O<sub>9</sub> Ferroelectric Ceramics

Preparation and Properties of SrBi2.2 Ta2O9 Thin Film

Effect of Forming Gas on Properties of SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> Ferroelectric Thin Film and Powder

Pulsed Laser Ablation Synthesis and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

Characterization of Metalorganic Decomposition-Derived SrBi2Ta2O9 Thin Films with Different Thicknesses

Preparation and electric properties of SrBi2Ta2O9 thin films by MOD method

Fabrication and Properties of SrBi<sub>2</sub>(Ta<sub>1-x</sub>Nb<sub>x</sub>)<sub>2</sub>O<sub>9</sub> Ferroelectric Ceramics

Structure and Voltage Dependence of Ferroelectric Properties of SrBi2Ta2O9 Thin Films

Microstructure and Ferroelectric Properties of Bi3titao9 Thin Films by Metalorganic Decomposition Method

SrBi4Ti4O15 thin films of Ti containing bismuth-layered-ferroelectrics prepared by pulsed laser deposition

Effect of Forming Gas on Properties of SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> Ferroelectric Thin Film and Powder: Effect of Forming Gas on Properties of SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> Ferroelectric Thin Film and Powder

Preparation and Properties of SrBi_(2.2) Ta_2O_9 Thin Film

Structural and Ferroelectric Properties of La Modified Sr0.8bi2.2ta2o9 Thin Films

Effect of titanium substitution on film structure and ferroelectric properties of Sr-deficient Sr Bi Ta O thin films 0 . 75 2 . 35 2 9

Ferroelectric Properties of Sr2bi4ti5o18 Thin Films

Characteristics of SrBi2Ta2O9 Thin Films Prepared by Pulsed Laser Deposition for Non-Volatile Memory Applications

Preparation and characterization of metalorganic decomposition-derived SrBi2Ta2O9 thin films

Properties of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Decomposition

0.75SrBi&lt;sub&gt;2&lt;/sub&gt;Ta&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;9&lt;/sub&gt;-0.25Bi&lt;sub&gt;3&lt;/sub&gt;TiTaO&lt;sub&gt;9&lt;/sub&gt; Layered Structural Thin Films: Microstructure and Ferroelectric Properties

0.75Srbi2ta2o9-0.25Bi3titao9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties

Thin Films of Layered-Structure (1-x)SrBi2Ta2O9-xBi3TiTaO9 Solid solution for Ferroelectric Random Access Memory Devices

Fabrication and Properties of SrBi<sub>2</sub>(Ta<sub>1-x</sub>Nb<sub>x</sub>)<sub>2</sub>O<sub>9</sub> Ferroelectric Ceramics

Preparation and Properties of SrBi2.2 Ta2O9 Thin Film

Effect of Forming Gas on Properties of SrBi&lt;SUB&gt;2&lt;/SUB&gt;Ta&lt;SUB&gt;2&lt;/SUB&gt;O&lt;SUB&gt;9&lt;/SUB&gt; Ferroelectric Thin Film and Powder

Pulsed Laser Ablation Synthesis and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

Characterization of Metalorganic Decomposition-Derived SrBi2Ta2O9 Thin Films with Different Thicknesses

Preparation and electric properties of SrBi2Ta2O9 thin films by MOD method

Fabrication and Properties of SrBi&lt;sub&gt;2&lt;/sub&gt;(Ta&lt;sub&gt;1-x&lt;/sub&gt;Nb&lt;sub&gt;x&lt;/sub&gt;)&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;9&lt;/sub&gt; Ferroelectric Ceramics

Structure and Voltage Dependence of Ferroelectric Properties of SrBi2Ta2O9 Thin Films

Microstructure and Ferroelectric Properties of Bi3titao9 Thin Films by Metalorganic Decomposition Method

SrBi4Ti4O15 thin films of Ti containing bismuth-layered-ferroelectrics prepared by pulsed laser deposition

Effect of Forming Gas on Properties of SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> Ferroelectric Thin Film and Powder: Effect of Forming Gas on Properties of SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> Ferroelectric Thin Film and Powder

Preparation and Properties of SrBi_(2.2) Ta_2O_9 Thin Film

Structural and Ferroelectric Properties of La Modified Sr0.8bi2.2ta2o9 Thin Films

Effect of titanium substitution on film structure and ferroelectric properties of Sr-deficient Sr Bi Ta O thin films 0 . 75 2 . 35 2 9

Ferroelectric Properties of Sr2bi4ti5o18 Thin Films

Characteristics of SrBi2Ta2O9 Thin Films Prepared by Pulsed Laser Deposition for Non-Volatile Memory Applications

Preparation and characterization of metalorganic decomposition-derived SrBi2Ta2O9 thin films

Properties of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Decomposition

0.75SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-0.25Bi<sub>3</sub>TiTaO<sub>9</sub> Layered Structural Thin Films: Microstructure and Ferroelectric Properties

Effect of Forming Gas on Properties of SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> Ferroelectric Thin Film and Powder

Fabrication and Properties of SrBi<sub>2</sub>(Ta<sub>1-x</sub>Nb<sub>x</sub>)<sub>2</sub>O<sub>9</sub> Ferroelectric Ceramics