ELECTRIC PROPERTIES OF LAYERED PEROVSKITE Sr0.8A0.1Bi2.1Ta1.5Nb0.5O9 THIN FILMS (A = LA, PR)

Haifeng Shi,Caixia Yang,Yinyin Lin,Ting-Ao Tang,Shantao Zhang
DOI: https://doi.org/10.1080/10584580600659498
2006-01-01
Integrated Ferroelectrics
Abstract:ABSTRACT Bismuth-layered ferroelectric thin films of Sr0.8A0.1Bi2.1Ta1.5Nb0.5O9 (A = La, Pr) were fabricated by using the metalorganic decomposition (MOD) method. Structural characterization of the films by x-ray diffraction revealed that the films are polycrystalline in nature. Raman spectroscopy gave the evidence that the heavier La3+/Pr3+ is entering into the lattice replacing the lighter Sr2+ in A-site. The ferroelectric measurement revealed that the remanent polarization (2Pr) value of the SPBTN film was 22 μ C/cm2, which was slightly lower than that of SLBTN (24 μ C/cm2). The coercive field (2Ec) value of SPBTN film was 102 kV/cm, which was a bit lower than that of SLBTN (112 kV/cm). All the films exhibited minimal (≤8%) degradation of polarization for up to 109 switching cycles. Our results reveal that Pr and Nb co-modification has almost the same effect in improving the ferroelectric properties of SBT as La and Nb co-modification.
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