Abstract:Ferroelectric lanthanum (La)-substituted bismuth titanate (Bi4-xLaxTi3O12, BLT) nanocrystalline films with the composition range of 0 <= x <= 1 have been directly deposited on n-type Si (100) substrates by chemical solution deposition. The La substitution effects on the preferred orientation, surface morphology, phonon modes, emission bands and electronic band structures of the BLT films have been investigated by microscopy, Raman scattering, photoluminescence and spectroscopic ellipsometry at room temperature. X-Ray diffraction analysis shows that the films are polycrystalline and exhibit the pure perovskite phase structure. With increasing La composition, the (100)-orientation degree can be enhanced and the root-mean-square roughnesses slightly increase from 6.5 to 8.3 nm. It was found that the Raman-active mode A(1g)[Bi] at about 59 cm(-1) is unchanged while the B-1g and A(1g)[Ti] phonon modes at about 648 and 853 cm(-1) are shifted towards higher frequency by about 36.6 and 8.4 cm(-1), respectively. Photoluminescence spectra show that the intensity of the peak located at about 2.3 eV increases with the La composition, except for the Bi3LaTi3O12 film, due to the smallest grain size and oxygen vacancy defects. The optical constants of the BLT films have been uniquely extracted by fitting the measured ellipsometric spectra with a four-phase layered model (air/surface rough layer/BLT/Si) in the photon energy range of 0.73-4.77 eV. The Adachi dielectric function model has been successfully applied and reasonably describes the optical response behavior of the ferroelectric BLT films. Moreover, the film packing density decreases while the optical band gap linearly increases from 3.610 +/- 0.066 to 3.758 +/- 0.068 eV with increasing La composition. It is surmised that the phenomena are mainly ascribed to the variations of the electronic structure, especially for the conduction band, which is perturbed by the La doping.

Ferroelectric Properties Of La And Zr Substituted Bi4ti3o12 Thin Films

Effects of Zr substitution on structures and ferroelectric properties of Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films

Ferroelectric Properties of Bi3.25la0.75ti3o12 Thin Films Grown on the Highly Oriented Lanio3 Buffered Pt/Ti/Sio2/Si Substrates

FERROELECTRIC PROPERTIES OF Zr-DOPED Bi3.25La0.75Ti3O12 THIN FILM DEPOSITED BY RF MAGNETRON SPUTTERING

Ferroelectric properties of Bi 3 . 25 La 0 . 75 Ti 3 O 12 thin films grown on the highly oriented LaNiO 3 buffered Pt Õ Ti Õ SiO 2 Õ Si substrates

Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

Composition-dependent Structures and Properties of Bi4Ti3−xZrxO12 Thin Films

Growth and Ferroelectric Study of Bi3.25La0.75Ti3O12 Thin Films on Different Substrates

Improvement of Ferroelectric Properties in Mo-Substituted Bi3.35La0.75Ti3O12 Films by Optimization of Heating Rate

Bi4-xlaxTi3O12 ferroelectric thin films prepared by RF magnetron sputtering

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Prepared by Chemical Solution Deposition

Improvement of Ferroelectric Properties in Mo-Substituted Bi<sub>3.35</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> Films by Optimization of Heating Rate

Temperature-dependent Ferroelectric and Dielectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Evolution of orientation degree, lattice dynamics and electronic band structure properties in nanocrystalline lanthanum-doped bismuth titanate ferroelectric films by chemical solution deposition.

Structural and Electrical Properties of (bi,la)4ti3o12 Thin Films with a Bi2O3 Top-Layer Prepared by a Chemical Solution Deposition Method

Characterization And Properties Of Lanthanum-Substituted Bismuth Titanate Ferroelectric Thin Films For Feram Application

Fatigue and Ferroelectric Behavior of La and Zn Comodified Bifeo3 Thin Films

Ferroelectric properties of sandwich structured (Bi, La)<sub>4</sub>T<sub>3</sub>O<sub>12</sub>/Pb(Zr, Ti)O<sub>3</sub>/ (Bi, La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>thin films on Pt/Ti/SiO<sub>2</sub>/Si substrates

Ferroelectric properties of Bi3.25-x/3La0.75Ti 3-xNbxO12 films prepared by pulsed laser deposition

Ferroelectric properties of sandwich structured (Bi, La)4T3O12/Pb(Zr, Ti)O3/ (Bi, La)4Ti3O12 thin films on Pt/Ti/SiO2/Si substrates