Temperature-dependent Ferroelectric and Dielectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Shan-Tao Zhang,Zhong Chen,Chong Zhang,Guo-Liang Yuan
DOI: https://doi.org/10.1016/j.apsusc.2009.10.089
IF: 6.7
2010-01-01
Applied Surface Science
Abstract:To investigate temperature-dependent ferroelectric and dielectric properties of ferroelectric films, Bi3.25La0.75Ti3O12 (BLT) thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. The ferroelectric and dielectric behaviors have been studied in a wide temperature range from 80K to room temperature. The saturated polarization (Psat) decreases with decreasing temperature and decreasing electric field, whereas remnant polarization (Pr) shows a more complex temperature dependence. These results, which can be well explained based on a temperature-dependent charged defects–domain wall interaction model, might be helpful for further understanding the domain switching behavior. Based on these results, an alternative way to investigate temperature-dependent ferroelectric fatigue is proposed and experimentally carried out. The measured fatigue rate is found to be linearly dependent on temperature, consistent with the report on Pb(Zr,Ti)O3 films. Temperature-dependent dielectric measurements of the films further confirm the above explanation.
What problem does this paper attempt to address?