The Dielectric Relaxation Behavior of (na0.82k0.18)0.5bi0.5tio3 Ferroelectric Thin Film
H. Dong,X. J. Zheng,W. Li,Y. Q. Gong,J. F. Peng,Z. Zhu
DOI: https://doi.org/10.1063/1.3665389
IF: 2.877
2011-01-01
Journal of Applied Physics
Abstract:(Na1-xKx)0.5Bi0.5TiO3 (NBT-KBT-100 x) thin films were deposited on Pt/Ti/SiO2/Si(100) by metal organic decomposition, and the effects of potassium content (x = 0.15, 0.18, 0.20, 0.25) on ferroelectric, piezoelectric, dielectric properties of the thin films, and the temperature dependence of dielectric permittivity of NBT-KBT-18 thin film were investigated in detail. NBT-KBT-18 thin film is of the largest effective piezoelectric coefficient d33eff, remnant polarization 2Pr, spontaneous polarization 2 Ps, dielectric constant ɛr, and the lowest dielectric loss among the thin films. The dielectric constants decrease steeply with the increase of frequency, and there are a series of resonance peaks with Debye-like relaxation. In dielectric temperature spectra, two abnormal peaks corresponding to depolarization temperature and Curie temperature are at the range of 75-90 °C and 295-320 °C, and they are associated with the phase transitions. Based on the dielectric relaxation theory, Debye-like relaxation and diffused phase transition/frequency dispersion are interpreted by space charge polarization and polar nanoregions. Because of the centrosymmetric paraelectric phase, the 2 Ps and ɛr of NBT-KBT-100 x thin film are responsible for the d33eff according to phenomenological equation. The improved d33eff may make NBT-KBT-18 thin film a promising candidate for piezoelectric thin film devices, and the enhanced Curie temperature will offer useful guidelines of safe working temperature for potential application in micro-electro-mechanical system.