Fatigue characteristics of Nd-substituted Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> ferroelectric thin films at elevated temperatures

Chao Zhao,Di Wu,Aidong Li,Yidong Xia
DOI: https://doi.org/10.1088/0022-3727/41/12/122003
2008-01-01
Abstract:Well-crystallized Nd-substituted Bi4Ti3O12 ferroelectric thin films, Bi3.5Nd0.5Ti3O12 (BNdT50) and Bi3.15Nd0.85Ti3O12 (BNdT85), were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. The microstructures were studied by x-ray diffraction and transmission electron microscopy. Fatigue characteristics of BNdT50 and BNdT85 films were measured at 25, 75 and 125 degrees C. Both films showed better fatigue resistance at elevated temperatures. The improved fatigue resistance is discussed in terms of the temperature dependence of the competition between domain wall pinning and unpinning, which determine the loss of remanent polarization.
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