Ferroelectric Properties and Fatigue of Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method

GUO Dong-yun,LI Mei-ya,PEI Ling,YU Ben-fang,WU Geng-zhu,WANG Yun-bo,YANG Bin,YU Jun
DOI: https://doi.org/10.3969/j.issn.1004-2474.2007.06.018
2007-01-01
Abstract:The Bi4Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using Sol-Gel method.The structure and morphology of the films were characterized by using X-ray diffractometer and atomic force microscopy.The thin films showed a perovskite phase and dense microstructure.The Bi4Ti3O12 thin films annealed at 700 ℃ showed 2Pr value of 12.5 μC/cm2 and 2Ec value of 116.7 kV/cm at an applied voltage of 6 V.After the switching of 1×109 cycles,the remanent polarization value decreased to 76% of its pre-fatigue values.The reason of the poor fatigue is discussed.
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