Studies on the Fatigue Properties of SrBi2Ta2O9ferroelectric Thin Films

ZG Zhang,JS Liu,YN Wang,JS Zhu,F Yan,XB Chen,HM Shen
DOI: https://doi.org/10.1080/00150199908224335
1999-01-01
Ferroelectrics
Abstract:Electric measurements demonstrate that annealing condition, applied voltage and switching frequency have influence on the fatigue of SET thin films. The SET thin films annealed in air show more polarization degradation than those annealed in oxygen. The fatigue of SET thin films increases with decreasing applied voltage and switching frequency, and the suppressed polarization caused at lower switching voltage can be recovered by switching;at higher voltage. The fatigue mechanism is discussed in this paper.
What problem does this paper attempt to address?