Impact of Forming Gas Annealing on the Fatigue Characteristics of Ferroelectric SrBi2Ta2O9 Thin Films

DS Wang,T Yu,A Hu,D Wu,AD Li,ZG Liu,NB Ming

DOI: https://doi.org/10.1063/1.1406979

IF: 4

2001-01-01

Applied Physics Letters

Abstract:The metalorganic decomposition-derived SrBi2Ta2O9 (SBT) ferroelectric thin films were annealed in forming gas (5%H2+95%N2), and their fatigue characteristics were investigated. Although the hysteresis loops of these films had an unacceptable degradation under such a H2-containing reducing atmosphere, no obvious polarization fatigue with electric field cycling could be observed. However, an increase of P*r was observed over the initial period of the fatigue test. It could be viewed as a competition between the increase of P*r due to the leakage current and the decrease of P*r due to switching polarization. H2 played an important role in the increasing in the leakage current of SBT thin films, forming more weak pinning centers of domain walls, and degradation in the fatigue characteristics.