Abstract:Ferroelectric thin films in Bi(Ni1/2Ti1/2)O3–PbTiO3 system are promising materials for applications in high energy-storage embedded capacitors and piezoelectric micro-devices due to their good dielectric and piezoelectric properties. However, the electrical properties of the films are largely dependent on the synthesis conditions. In this work, Bi(Ni1/2Ti1/2)O3–PbTiO3 films near the MPB composition were prepared via chemical solution deposition and the effects of thermal anneal temperatures on the microstructure and electrical properties were investigated. XRD patterns showed that the films annealed under 750°C have a pure perovskite phase, while a small amount of pyrochlore phase was detected above 800°C. AES depth-composition analysis revealed that Bi and Pb evaporated very severely as annealing temperature increased above 800°C, which is responsible for the appearance of pyrochlore phase and pin-pores in the films. Furthermore, current–voltage measurement confirmed that the changes in morphology and the volatilization of Bi/Pb at high temperature which caused non-stoichiometry may be responsible for the changes in leakage-current density. Dielectric and ferroelectric properties of the films are also quite dependent on the annealing temperature. As a result, the as-prepared film annealed at 750°C shows the largest permittivity and polarization with a giant energy-storage density of 46.7J/cm3 and the optimal piezoelectric response with a local effective piezoelectric coefficient d33⁎ of 62.2pm/V.

Effects of annealing treatment on fatigue recovery of lead zirconate titanate thin films

Effect of annealing under N 2 atmosphere on electrical fatigue properties of PLZT ceramics

Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: Experimental evidence and implications

Evidences for Interfacial Phase Decomposition in Ferroelectric Thin Films During Fatigue

Effect Of Annealing Temperature On Properties Of Sputtered Pzt Thin Films

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Effectof annealing temperature onthe propertiesof PZTferroelectric thinfilms inthe processof RTPwithSol-gel method

Studies on the Fatigue Properties of SrBi2Ta2O9ferroelectric Thin Films

Improving the Fatigue Endurance of Lead Zirconate Titanate Thin Films Through PbO Interfacial Modification

Temperature-Dependent Fatigue Behaviors Of Ferroelectric Abo(3)-Type And Layered Perovskite Oxide Thin Films

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

Polarization Fatigue Of Ferroelectric Pb(Zr0.1ti0.9)O-3 Thin Films: Temperature Dependence

Effects of Annealing Temperature on the Structures, Ferroelectric and Magnetic Properties of Aurivillius Bi5ti3feo15 Polycrystalline Films

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Identification of Interfacial and Bulk Effects in Modulating Fatigue Behaviors of Pb(Zr0.52Ti0.48)O3 Thin Films

Electric Field Inhomogeneity As a Cause for Fatigue in Lead Zirconate Titanate Ferroelectrics

Effect of annealing temperature on the energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films prepared by sol–gel method

Effects of thermal anneal temperature on electrical properties and energy-storage density of Bi(Ni 1/2 Ti 1/2 )O 3 –PbTiO 3 thin films

Impact of Forming Gas Annealing on the Fatigue Characteristics of Ferroelectric SrBi2Ta2O9 Thin Films

Enhanced Fatigue-Endurance of Ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Non-destructive investigation of microstructure evolution due to ferroelectric fatigue in PLZT ceramics