Abstract:Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Effect Of Annealing Temperature On Properties Of Sputtered Pzt Thin Films

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

Effectof annealing temperature onthe propertiesof PZTferroelectric thinfilms inthe processof RTPwithSol-gel method

Effect of Annealing Temperature on Ferroelectric Electron Emission of Sol–gel PZT Films

The Annealing Induced Extraordinary Properties of SI Based ZNO Film Grown by RF Sputtering

Effects of Annealing Temperature on the Surface and Ferroelectric Domain of PLT Films

Effects of annealing treatment on fatigue recovery of lead zirconate titanate thin films

Effect of thickness on microstructure and electrical properties of PZT films prepared by a modified Sol-Gel method

Effect of Annealing Temperature on Properties of Barium Zirconium Titanate Thin Films Deposited by Sol-Gel Method

Effects of the Post-annealing Processes on the Morphologies and Microstructures of PCT Thin Films

Crystallization of Ferroelectric Lead Zirconate Titanate Thin Films by Microwave Annealing at Low Temperatures

Effect of Different Annealing Methods on the Properties of PSTT Thin Films

Properties of PZT thin films with different compositions

Effect of Annealing on the Morphology,Structure and Photoelectric Properties of AZO/Pt/FTO Trilayer Films

Effect of Annealing Temperature on Performance of CZTS Thin Films Prepared via Metal Targets Sequential Sputtering Followed by Sulfuration Technology

Effects Of Rapid Thermal Annealing On The Structural, Electrical, And Optical Properties Of Zr-Doped Zno Thin Films Grown By Atomic Layer Deposition

Effect of Annealing on Structure and Electrical Properties of TiO2 Thin Films

Influence of Annealing Process on Crystalline, Microstructure, and Ferroelectric Properties of PSTT5 Thin Films

Heat-treating effect on the properties of Pb1-xla x(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process

Effects of Annealing Temperature on the Structure, Electrical Resistivity and Infrared Emissivity of PtOx Films