Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Qiyue Shao,Aidong Li,Huiqin Ling,Di Wu,Yijun Wang,Naiben Ming
DOI: https://doi.org/10.1016/S0167-577X(00)00408-0
IF: 3
2001-01-01
Materials Letters
Abstract:Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared by sol-gel methods using zirconium nitrate hydrate as the starting zirconium precursor. X-ray diffraction (XRD), atomic force microscopy (AFM) and electrical measurement were used to characterize PZT thin films. The effect of various heat treatment processing of rapid thermal anneal (RTA) and conventional thermal anneal (CFA) on structure and ferroelectric properties of PZT thin films has been investigated. RTA-annealed PZT films show better structure and electrical properties than CFA-annealed ones. The RTA-treated PZT thin films at 650°C show a remanent polarization of 19.7 μC/cm2 and coercive field of 18.4 kV/cm, and exhibit high fatigue resistance against 4×109 switching cycles, all of which can match PZT thin films obtained using zirconium alkoxide. Meanwhile, the use of inorganic zirconium salt greatly increases the shelf life of the precursor solution.
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