Abstract:Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) thin films were grown on Si (100) and Pt(111)/Ti/SiO2/Si(100) substrates by a new reverse dip-coating method of sol–gel process. The method was first proposed and applied to coat films. It has several advantages over the conventional sol–gel coating method, including: no consideration of the mechanical transmission that is difficult to manipulate with costly exact apparatus in classical dip-coating procession, convenient processing control, simplicity, low cost, less pollution, and easy fabrication films on large areas and irregular shaped devices etc. This paper studied the factors including PbO content of precursor, TiO2 and ZrO2 layers, which are related to raw materials of PZT precursor and influence greatly the crystal orientation of the final thin films. We find that the PZT films deposited by precursor with 20% mole excess Pb displayed strong (111) preferred orientation, with 5% mole excess Pb showed a little (100) orientation and pyrochlore phase. The precursor with 10% mole excess Pb was found prompting the PZT films phase transformation with (110) preferred orientation. In addition, the results show that the TiO2 and ZrO2 seeding layers had totally different effects on the preferred orientation of PZT films. The films with TiO2 seeding layer were highly (111) oriented and exhibited better ferroelectric properties (remnant polarization Pr=14.2 μC cm−2, coercive field Ec=59.1 Kv cm−1) than those of the films with ZrO2 seeding layer shown (100) orientation (Pr=7.4 μC cm−2, Ec=42.9 Kv cm−1).

Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

Optimization of Seed Layer of PbTiO3/PbZr0.3Ti0.7O3/PbTiO3 Sandwich Structure Ferroelectric Thin Film

THE EFFECT OF SEEDING LAYERS ON FERROELECTRIC PROPERTIES OF PTZT THIN FILMS

Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering

Enhanced electrical properties of Pb(Zr0.80Ti0.20)O3 thick films prepared by a modified sol–gel technique

Enhanced Ferroelectric Properties of 0.95pb(sc0.5ta0.5)o3–0.05pbtio3 Thin Films with Pb(Zr0.52,Ti0.48)O3 Seed Layer

The Ferroelectric and Antiferroelectric Behavior of Pbtio3/Pbzro3-Multilayered Thin Films

Enhanced Dielectric and Piezoelectric Properties of RF Sputtered Pb(Zr0.60,Ti0.40)O3 Thin Films Deposited on Sol-Gel Derived Pb1+x(Zr0.40,Ti0.60)O3 Seed Layer with Various Lead Contents

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Investigation on the Effects of PbO Content and Seeding Layers of TiO2 and ZrO2 on the Orientation and Microstructure of Pb(Zr0.52Ti0.48)O3 Ferroelectric Films Grown by Reverse Dip-Coating Method of Sol–gel

Characterizations Of Nanoembossed Pb(Zr-0.3, Ti-0.7)O-3 Ferroelectric Films

Improved Ferroelectric Properties of (111)-Oriented PbZr0.52Ti0.48O3Thin Films on SrRuO3/Pt Hybrid Electrodes

Self-separated PZT thick films with bulk-like piezoelectric and electromechanical properties

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Enhancement of Ferroelectricity and Large Dielectric Strength of Pb(Zr0.52ti0.48)O-3 Thin Films on Srtio3 Substrate with A Srruo3 Buffer

Strain-enhanced dielectric and ferroelectric properties of Pb(Zr 0.8Ti0.2)O3/Pb(Zr0.2Ti 0.8)O3 multilayer thin films without buffer layers

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

The Domain Structure and Electric Properties of Double-Side Seed Layers Pt/Pzt/Pt Thin Films

Fabrication and electrical properties of lead zirconate titanate thick films using a new sol-gel processing technique