Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Q Zhang,TL Ren,LT Zhang,J Zhu,ZJ Li
DOI: https://doi.org/10.1143/jjap.40.5074
IF: 1.5
2001-01-01
Japanese Journal of Applied Physics
Abstract:The ferroelectric Pb(Zr, Ti)O3 (PZT) thin films have been directly synthesized on silicon substrates by sol–gel method. X-ray diffraction (XRD) analysis reveals that besides the rhombohedral structure, the random oriented tetragonal perovskite PZT is formed with the lattice parameters of a=3.97 Å and c=4.10 Å. Energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) results indicate that the chemical composition of the PZT thin film is stoichiometric just as designed. High resolution electron microscopy (HREM) results show that amorphous SiOx (x=1–2) layer and nanometer lead grains are formed at the interface between the silicon substrate and PZT thin film.
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