Abstract:Among the many ferroelectric film fabrication techniques, the sol-gel process provides high purity, large deposition area and easy composition control. However, the thickness limit of a crack-free single-layer film is about 0.2 mum and about 10 times of coating and thermal treatment processing are needed to deposit 1.5 mum-thick films. In laser ablation, the deposition rate is expected to be 1-2 mum/h, but the film quality is lower than that deposited by the sol-gel method. In this work, the hybrid process, involving the sol-gel method and laser ablation, was used to make 1.65 mum-thick lead zirconate titanate (PZT) films with well-crystallized perovskite phase at the (111) orientation. We deposited (111)-oriented 0.15 mum-thick PZT film on Pt/Ti/SiO2/Si substrates using the sol-gel method and then deposited 1.5 mum-thick PZT films by laser ablation. The remanent polarization of 28.6 muC/cm(2) and the coercive field of 58.0 kV/cm were obtained while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The piezoelectric coefficient d(31) was also investigated and found to be 16.65 +/- 4 pC/N. In the application, a micromirror actuated by the hybrid PZT films was designed and fabricated successfully by a three-mask lithography process. The scanning angle of 6 2 degrees was demonstrated, while resonating with 5 V-p.p at the resonance frequency (1975 Hz).

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

The post crystallization process of lead zirconate titanate films and effects on dielectric properties

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films

Highly (100)-Textured Pb(Zr0.52Ti0.48)O3 Film Derived from a Modified Sol–gel Technique Using Inorganic Zirconium Precursor

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Evaluation of texture in Pb(Zr0.52Ti0.48)O 3 films prepared by sol-gel route

Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited Through Sol-Gel Process

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation

Preferred orientation controlling of PZT (52–48) thin films prepared by sol–gel process

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Texture Evolution of Sol-Gel-Derived Pb(Zr,Ti)O-3 Film on Platinum Bottom Electrode with Different Annealing Process

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films

Sol–gel-processed (001)-textured BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films