Abstract:By using sol-gel spin coating method nanostructured Pb(Zr0.53Ti0.47)O3(PZT) ferroelectric thin films were fabricated on the Si substrates coated by nanoporous alumina membranes with average pore sizes of 20-100nm,in which metal(Au or Pt)nanowires were embedded as a part of the bottom electrode.The dielectric,ferroelectric properties and microstructure of the nanostructured PZT thin films were characterized.The dielectric measurements demonstrated that the dielectric constant of the PZT nanofilms with a thickness of 25nm decreased quickly from 860 to 100 as increasing the frequency below 104 Hz,and then remained almost constant of 100 as further increasing the frequency up to 106 Hz.Such a fast decrease of the dielectric constant in the low frequency region was resulted from the dielectric relaxation of space charges accumulated at the interfaces between the nanofilm and the(bottom and top)metal electrodes.The dielectric loss peak observed near 4000Hz was contributed from the resonant absorption effect of the space charges.The polarization-electric field hystere-sis loops of the nanostructured PZT films with a thickness 100nm showed that the remanent polarization of the PZT nanofilm was 50μC/cm2 and coercive field of 500kV/cm.Cross-sectional TEM images showed that the nanostructured PZT films contacted directly with the bottom electrode(metal nanowires),and the interface between them exhibited some degree of waviness.It was found that some Au nanowires became into branches at their ends after post-annealing the PZT nanofilms,whereas such a phenomenon was effectively prohibited by using Pt nanowires.A selection of proper post-annealing temperature was the critical processing parameter for fabricating nanostructured PZT ferroelectric thin films as making a trade-off between the ordered metal nanowires within the nanoporous alumina membranes and the crystallinity of ferroelectric nanofilms.

THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS

Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Properties of multi-layered PZT films

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Preparation and properties of PLZT thick films on silicon

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

Fabrication of Nanostructured PZT Ferroelectric Thin Films and Their Characterization

The post crystallization process of lead zirconate titanate films and effects on dielectric properties

Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Thickness dependence of PbZr0.52Ti0.48O3 thin film ferroelectric parameters

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Electric-Induced Deposition of Lead Zirconate Titanate Porous Monolayer Film

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Fabrication and properties of PLT/PLZT/PLT structures obtained by RF magnetron sputtering

Preparation and Optical Nonlinear Properties of PLT Ceramic Films by Sol-Gel Process