Abstract:Polarization switching and energy storage properties of a series of Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) thin films deposited on (100)-textured LaNiO3 (LNO)-buffered Si substrates and (111)-textured Pt/Ti/SiO2/Si substrates were investigated. It was revealed that the PLZT films deposited on the (100)-textured LNO-buffered Si substrates prefer the (100) textured structure, while the orientation of the films deposited on the (111)-textured Pt-coated Si substrates is random. With respect to the films on the Pt-coated Si substrates, the (100) textured PLZT films have bigger compressive residual stress, larger electrical polarization, better dielectric properties, and better energy storage performances. For the (100)-orientated PLZT films, the energy density (Ws) and efficiency (η) measured at room temperature are about 15.3J/cm3 and 56% respectively. Moreover, the better frequency stability in the range from 20Hz to 10kHz, and temperature stability in the range from 25 to 270°C are demonstrated in the (100)-orientated PLZT films. These results indicate that the PLZT films with LNO bottom electrode could be potential candidate for applications in high energy storage density capacitors.

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

Phase Transition and Electrical Properties of Highly [1 1 1]-Oriented and Niobium-Modified Pb(ZrxTi1−x)O3thin Films with Different Zr/Ti Ratios

Phase Transformation Properties of Highly (100)-Oriented Plzst 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb-Srtio3 Single-Crystal Substrates

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Energy-Storage Performance And Electrocaloric Effect In (100)-Oriented Pb0.97la0.02(Zr0.95ti0.05)O-3 Antiferroelectric Thick Films

Effect of Nb Doping on Preferential Orientation, Phase Transformation Behavior and Electrical Properties of PbZrO3 Thin Films

Shift of Morphotropic Phase Boundary in High-Performance [111]-Oriented Epitaxial Pb (zr, Ti)O-3 Thin Films

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films

Highly-Oriented Pnzt Ferroelectric Thin Films on Pt/Ti/Sio2/Si Substrate

Direct current electric field adjustable phase transformation behavior in (Pb,La)(Zr,Ti)O3 antiferroelectric thick films

Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films

Single-Crystal Nb-Doped Pb(Zr,Ti)O-3 Thin Films on Nb-Doped Srtio3 Wafers with Different Orientations

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Tunable Electric Properties of PbZrO3 Films Related to the Coexistence of Ferroelectricity and Antiferroelectricity at Room Temperature

Effect of bottom electrodes on polarization switching and energy storage properties in Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 antiferroelectric thin films

Characterization of (100)-Oriented BiScO3–PbTiO3 Thin Films Synthesized by a Modified Sol-Gel Method

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Structure and Electrical Properties of (100)-Oriented BiSc1/2Fe1/2O3–PbTiO3 Thin Films with Different Thickness Via Sol–gel Method