Effect of bottom electrodes on polarization switching and energy storage properties in Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 antiferroelectric thin films

x g fang,shao xian lin,a h zhang,x b lu,x s gao,ming zeng,j m liu

DOI: https://doi.org/10.1016/j.ssc.2015.06.017

IF: 1.934

2015-01-01

Solid State Communications

Abstract:Polarization switching and energy storage properties of a series of Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) thin films deposited on (100)-textured LaNiO3 (LNO)-buffered Si substrates and (111)-textured Pt/Ti/SiO2/Si substrates were investigated. It was revealed that the PLZT films deposited on the (100)-textured LNO-buffered Si substrates prefer the (100) textured structure, while the orientation of the films deposited on the (111)-textured Pt-coated Si substrates is random. With respect to the films on the Pt-coated Si substrates, the (100) textured PLZT films have bigger compressive residual stress, larger electrical polarization, better dielectric properties, and better energy storage performances. For the (100)-orientated PLZT films, the energy density (Ws) and efficiency (η) measured at room temperature are about 15.3J/cm3 and 56% respectively. Moreover, the better frequency stability in the range from 20Hz to 10kHz, and temperature stability in the range from 25 to 270°C are demonstrated in the (100)-orientated PLZT films. These results indicate that the PLZT films with LNO bottom electrode could be potential candidate for applications in high energy storage density capacitors.