Energy-Storage Performance And Electrocaloric Effect In (100)-Oriented Pb0.97la0.02(Zr0.95ti0.05)O-3 Antiferroelectric Thick Films

Xihong Hao,Zhenxing Yue,Jinbao Xu,Shengli An,Cewen Nan
DOI: https://doi.org/10.1063/1.3641983
IF: 2.877
2011-01-01
Journal of Applied Physics
Abstract:(100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O-3 (PLZT) antiferroelectric films with a thickness of about 1.7 mu m were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm(2) over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm(3) at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, Delta T = 8.5 degrees C, was obtained near the phase-transition temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641983]
What problem does this paper attempt to address?