Large Enhancement of Energy Storage Density in (pb0.92la0.08)(zr0.65ti0.35)o3/pbzro3 Multilayer Thin Film

Buwei Sun,Mengyao Guo,Ming Wu,Zhuang Ma,Weiwei Gao,Haonan Sun,Xiaojie Lou
DOI: https://doi.org/10.1016/j.ceramint.2019.06.266
IF: 5.532
2019-01-01
Ceramics International
Abstract:(Pb0.92La0.08)(Zr0.65Ti0.35)O-3 (PLZT), PbZrO3 (PZO) films, and type A and type B PLZT/PZO multilayer thin films were deposited on Pt(111)/TiOx/SiO2/Si substrates by sol-gel method, where type A and type B films stand for PLZT/PZO/PLZT/PZO/PLZT/PZO and PLZT/PZO/PLZT/PLZT/PZO/PLZT multilayer thin film, respectively. Compared to the PLZT and PZO film, enhanced breakdown field strength and improved energy storage density were obtained in type A and B multilayer thin films. A superior energy storage density of 29.7 J/cm(3) with the energy storage efficiency of 50.8% was achieved in type B multilayer thin film, corresponding to 81% enhancement compared with the energy storage density of PLZT films (16.4 J/cm(3)). Additionally, the type B multilayer thin film exhibits a good thermal stability up to 160 degrees C and excellent fatigue endurance after 10(7) charging-discharging cycles. The enhanced energy storage performance of type B multilayer thin film shows promise and may stimulate further researches on energy storage applications of multilayer dielectric thin films.
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