Abstract:Polarization switching and energy storage properties of a series of Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) thin films deposited on (100)-textured LaNiO3 (LNO)-buffered Si substrates and (111)-textured Pt/Ti/SiO2/Si substrates were investigated. It was revealed that the PLZT films deposited on the (100)-textured LNO-buffered Si substrates prefer the (100) textured structure, while the orientation of the films deposited on the (111)-textured Pt-coated Si substrates is random. With respect to the films on the Pt-coated Si substrates, the (100) textured PLZT films have bigger compressive residual stress, larger electrical polarization, better dielectric properties, and better energy storage performances. For the (100)-orientated PLZT films, the energy density (Ws) and efficiency (η) measured at room temperature are about 15.3J/cm3 and 56% respectively. Moreover, the better frequency stability in the range from 20Hz to 10kHz, and temperature stability in the range from 25 to 270°C are demonstrated in the (100)-orientated PLZT films. These results indicate that the PLZT films with LNO bottom electrode could be potential candidate for applications in high energy storage density capacitors.

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Electric Fatigue Properties of Pb(Zr,Ti)O-3 Thin Films Grown on Lanio3 Buffer Pt/Ti/Sio2/Si Substrate by Metalorganic Chemical Vapor Deposition

Polarization Fatigue Of Ferroelectric Pb(Zr0.1ti0.9)O-3 Thin Films: Temperature Dependence

Polarization Fatigue in Antiferroelectric (pb,la)(zr,ti)o3 Thin Films: the Role of the Effective Strength of Driving Waveform

Polarization fatigue of ferroelectric Pb(Zr_xTi_(1-x_)O_3 thin films revisited

Effect of bottom electrodes on polarization switching and energy storage properties in Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 antiferroelectric thin films

Polarization Switching and Fatigue in Pb(Zr0.52ti0.48)O-3 Films Sandwiched by Oxide Electrodes with Different Carrier Types

Effective Driving Voltage on Polarization Fatigue in (Pb,la)(zr,ti)o-3 Antiferroelectric Thin Films

Fatigue Behaviors Of Bi3.25la0.75ti3o12/Pb(Zr0.52ti0.48)O-3/Bi3.25la0.75ti3o12 Trilayered Thin Films

Temperature-dependent Fatigue Behaviors of Ferroelectric Pb(Zr0.52Ti0.48)O3 and Pb0.75La0.25TiO3 Thin Films

Identification of Interfacial and Bulk Effects in Modulating Fatigue Behaviors of Pb(Zr0.52Ti0.48)O3 Thin Films

Genuine driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films

Polarization Fatigue Resistance of Ca-doped Pb(Zr0.52Ti0.48)O3 Thin Films Prepared by the Sol–gel Method

Fatigue Suppression of Ferroelectric Pb1−xBax(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Effect of Fatigue on the Pyroelectric and Dielectric Properties of PZT Films

Enhanced Fatigue-Endurance of Ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Fatigue Mechanism Verified Using Photovoltaic Properties of Pb(Zr0.52Ti0.48)O3 Thin Films

Improving the Fatigue Endurance of Lead Zirconate Titanate Thin Films Through PbO Interfacial Modification

Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: Experimental evidence and implications

Enhanced ferroelectric properties of epitaxial Pb(Zr,Ti)O3 film with LaAlO3 buffer