Abstract:Conventional and modified sol–gel processes were used to deposit PZT films with different thicknesses and Zr:Ti ratio on Pt/Ti/SiO2/Si substrates. The crystalline structure and growth behavior of the films have been studied by X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy. The ferroelectric polarization–electric (P–E) hysteresis loops of the films was also measured and discussed. The structure of piezoelectric element is as (Au or Pt/Ti)/PZT/Pt/Ti multilayer film. Meanwhile, it has a relatively flat surface and each layer exhibits a very dense, uniform, sharp interface. According to the results of P–E hysteresis loops, for given PZT film, the polarization and coercive electric field increase with applied voltage increasing. Furthermore, a new piezoelectric micro-actuator including two PZT elements and a U-type stainless steel substrate for positioning a magnetic head in a high-density hard disc device has been fabricated and investigated. The micro-actuator was also tested in order to investigate the driving mechanics. The results show that the peak-to-peak head displacement of 1.146 μm is achieved when an alternating voltage of ±20 V is applied on a U-type micro-actuator bonding with two 3 μm thick PZT elements and experimental frequency response of the micro-actuator with HSA higher than 22 kHz, yielding the required servo bandwidth (13 kHz).

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Properties of PbZr<sub>x</sub>Ti<sub>1−x</sub>O<sub>3</sub>/CeO<sub>2</sub>/SiO<sub>2</sub>/Si structure

Electric Properties of Pt/PbZr 0.53 Ti 0.47 O 3 /laalo 3 /si Structure

Properties Of Pbzr(X)(T)I(1-X)O(3)/Ceo2/Sio2/Si Structure

Enhanced Ferroelectric Properties Of Pb(Ta0.05zr0.48ti0.47)O-3 Thin Films On Pt/Tio2/Sio2/Si Substrates Using La0.67sr0.33mno3 Buffer Layers

Completely 〈111〉-Textured Growth and Enhanced Ferroelectric Properties of Pb(Ta0.05Zr0.48Ti0.47)O3 Films on Pt/TiO2/SiO2/Si(001) Using SrRuO3 Buffer Layer

The structural and electrical properties of Al/Pb(Zr0.52Ti 0.48)O3/Al2O3/Si with an Al 2O3 layer prepared by using the molecular atomic deposition method

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Ferroelectric Properties of Pb (ta0.05zr0.48ti0.47)o3 Films Prepared by Pulsed Laser Deposition

Influence of doping and buffer layers on Pb(Zr,Ti)O3 thin films derived from inorganic zirconium precursor

Characteristics of Pb(Zr, Ti)O3 Thin Films Deposited on Pt(Si) at Low Substrate Temperature by Using Ba(Mg1/3Ta2/3)O3 As Buffer Layer

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Electrical properties of a silicon-based PT/PZT/PT sandwich structure

Ferroelectric Properties of Bilayer Structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) Thin Films on Pt/TiO2/SiO2/Si Substrates

Fabrication And Characterization Of In-Plane Polarized Pzt Films With Interdigital Electrodes

Properties of multi-layered PZT films

Influence of cationic stoichiometry of the bottom electrode La1-xSrxCoO3 on the microstructures of Pb(Ta0.05Zr0.48Ti0.47)O3 ferroelectric films using Pt/TiO2 conducting barrier

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Preparation of Pb(Zr<sub>0.52</sub>Ti484848)O<sub>3</sub> thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Effects of oxide buffer layers on the microstructure and electrical properties of PLZST 2/87/10/3 antiferroelectric thin films