Electrical properties of a silicon-based PT/PZT/PT sandwich structure

Ren Tian-Ling,Zhang Lin-Tao,Liu Li-Tian,Li Zhi-Jian,TL Ren,LT Zhang,LT Liu,ZJ Li
DOI: https://doi.org/10.1080/00150190108008753
2001-01-01
Ferroelectrics
Abstract:A new silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O-3/PbTiO3 (PT/PZT/PT) sandwich structure is prepared in this paper. A simple and low-cost sol-gel method is used to fabricate the ferroelectirc thin films. The annealing temperature (700 degreesC) is greatly reduced compared with 900 degreesC of that without PT layers. Capacitance-voltage (C-V), polarization-field (P-E) and dielectric-frequency properties of the sandwich structure are tested. The PZT films are proved to have good dielectric and ferroelectric properties. The relative dielectric constant, the coercive field and the remnant polarization of the PZT films are measured to be about 900, 18 kV/cm and 16 muC/cm(2) respectively. The dielectric constant of the structure keeps constant at low frequency, and decreases in some degree at high frequency.
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