Abstract:Lead zirconate titanate Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films was successfully deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by a new modified sol-gel technique: precursor-monomer method. In this process three separated Pb 2 + , Zr 4 + , Ti 4 + precursor-monomers and metal chelating agents were mixed together to prepare PZT sol-solution (precursor). The precursor-monomer method has several advantages over conventional sol-gel methods, including easy change the atomic ratio of Pb 2 + /Zr 4 + /Ti 4 + and doping metallic ions, rapid PZT precursor synthesis, low processing temperature, without dry condition and distillation, long storage period, simplicity and low cost, etc. The paper investigated the effects of hydrolysis degree on the stability of PZT precursor, and it was found that the sample with 12.5% (v/v) adding water had the longest storage time. The inference of lead titanate (PbTiO 3 , PT) seeding layers on the microstructures, surface morphologies and ferroelectric properties of PZT films has also been systematically examined. We found that PZT films with PT/PZT/PT structure had lower perovskite phase crystallization temperature, larger grain size, better microstructure and ferroelectric properties as compared with no PT seeding layers films.

Characterization of Silicon-based PT/PZT/PT Sandwich Structure

Electrical properties of a silicon-based PT/PZT/PT sandwich structure

Silicon-Based PbTiO<sub>3</sub>/Pb(Zr, Ti)O<sub>3</sub>/PbTiO<sub>3</sub>Sandwich Structure

Silicon-Based Pbtio3/Pb(Zr,Ti)O-3/Pbtio3 Sandwich Structure

Preparation and Characterization of a Sol-Gel Prepared Ferroelectric Sandwich Structure

A New Silicon-Based Ferroelectric Sandwich Structure

Studies of a PT/PZT/PT Sandwich Structure for Feram Applications Using Sol-Gel Processing

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Microstructure And Properties Of Sol-Gel Pzt Thin Films With Buffer Layers

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films

Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited Through Sol-Gel Process

Preparation and Characterization of Pb(ZrxTi1-x)O3 Thin Film on Indium Tin Oxide

Characterization of Pb(Zr,Ti)O-3 Thin-Films on Soi Prepared by Excimer-Laser Deposition

A Facile Hot Plate Annealing at Low Temperature of Pb(Zr0.52Ti0.48)O3 Thin Films by Sol–gel Method and Their Ferroelectric Properties

Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Preparation of Pb(Zr0.52Ti484848)O3 Thin Films on Silicon-on-insulator Substrates by Excimer Laser Deposition Combined with Rapid Thermal Annealing