Fabrication And Etching Processes Of Silicon-Based Pzt Thin Films

Hongjin Zhao,Yanxiang Liu,Jianshe Liu,Tianling Ren,Litian Liu,Zhijian Li
DOI: https://doi.org/10.1117/12.440229
2001-01-01
Abstract:Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by X-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degreesC. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy (SEM) results indicated that the PZT thin films etching problem was well solved for the applications of PZT thin film devices.
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