Fabrication and Properties of Silicon-Based PZT Thin Films for MFSFET Applications

TQ Shao,TL Ren,LT Liu,J Zhu,ZJ Li

DOI: https://doi.org/10.1016/s0167-9317(02)00965-6

2004-01-01

Integrated Ferroelectrics

Abstract:Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for metal-ferroelectric-semiconductor FET (MFSFET) devices. PZT-based MFS capacitors using lead titanate (PT) as seeding layers have been prepared, respectively, on p-type 〈111〉 and n-type 〈100〉 silicon wafers directly by a sol–gel method. PZT/PT films are finally annealed at 650 °C for 1 min in oxygen ambient using rapid thermal annealing (RTA). The measured memory windows of the MFS capacitors are about 1.8 and 5 V under the polarization voltages of ±5 and ±10 V correspondingly. The MFS structure can be valuable for MFSFET applications.