Electrical and reliability properties of PZT thin films for ULSI DRAM applications

J Carrano,C Sudhama,V Chikarmane,J Lee,A Tasch,W Shepherd,N Abt

DOI: https://doi.org/10.1109/58.108871

Abstract:The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q(c)) of 15 muC/cm(2) (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.