Compositional design of Pb(Zr, Ti)O/sub 3/ for highly reliable ferroelectric memories
Naoya Inoue,Tsuneo Takeuchi,Yoshihiro Hayashi,N. Inoue,T. Takeuchi,Y. Hayashi
DOI: https://doi.org/10.1109/ted.2002.802649
IF: 3.1
2002-09-01
IEEE Transactions on Electron Devices
Abstract:We have investigated Pb(Zr, Ti)O3 (PZT) film composition suitable for highly reliable ferroelectric RAM (FeRAM) application. To obtain a wide operational margin for 2T/2C (two transistors and two capacitors) FeRAMs, the PZT film capacitor is needed to have a low coercive voltage ($V_{c}$) and a high dielectric constant on the polarization switching ($\varepsilon_{S}$) and a low dielectric constant on the nonswitching ($\varepsilon_{N}$), or essentially a large $\varepsilon_{S}/\varepsilon_{N}$ ratio. Concerning the B-site composition in the perovskite structure, it is found that lowering the Zr/Ti ratio from 47/53 to Ti-richer ones increases the ratio of $\varepsilon_{S}/\varepsilon_{N}$ as a positive effect on the wide operational margin, but increased $V_{c}$ as a negative effect. Taking the balance of these factors into consideration, it is concluded that an optimum composition, such as Zr/Ti = 30/70, provides the maximum operational margin. The A-site composition, on the other hand, affects the long-term reliability of a PZT capacitor. The endurance to the fatigue and imprint are enhanced by reduction of the Pb-excess and dope of La in the A-site. A La-doped PZT (Zr/Ti = 30/70) capacitor is successfully integrated to the 8 kbit-FeRAM macro with double-layer Al-wiring to confirm the feasibility of this capacitor.
engineering, electrical & electronic,physics, applied