An Innovated Process Of Pt/Pbtio3/Pbzr0.3ti0.7o3/Pbtio3/Pt Integrated Ferroelectric Capacitors For Feram

Longhai Wang,Jun Yu,Xin'Yi Wen,Yunbo Wang,Junxiong Gao,Feng Liu,Chao-Gang Wei,Tian-Ling Ren
DOI: https://doi.org/10.1080/10584580601077401
2007-01-01
Integrated Ferroelectrics
Abstract:An innovated and the typical on e-mask-patterned integrated ferroelectric capacitors process with Sol-Gel deposited technique are investigated. The key improvement for the innovated route is that the ferroelectric film was etched in non-crystalline phase. Due to the etching damage, the ferroelectric and fatigue properties of the typical integrated capacitor were degradation, and the desquamation of top electrode was also existed. The uniformly Pt/PbTiO3/PbZr0.3Ti0.7/O-3/PbTiO3/Pt (Pt/PTJPZT/PT/Pt) integrated ferroelectric capacitor arrays with explicit and smooth side-wall were obtained by the innovated integrated process. The XRD results exhibit that the innovated integrated ferroelectric capacitor was well crystallized, and the ferroclectric film belongs to the perovskite phase. The etching degradation on the properties of the innovated integrated ferroelectric capacitor was reduced to minimize, confirmed by SEM, EDX results, the ferroelectic and fatigue properties. The innovated process can be compatible with standard complementary metal oxide semiconductor (CMOS) technique. The reliable electric properties and fine profile of patterns indicate that it can be applied in the ferroelectric random access memories and other integrated ferroelectric devices.
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