The Domain Structure and Electric Properties of Double-Side Seed Layers Pt/Pzt/Pt Thin Films
Longhai Wang,Jun Yu,Yunbo Wang,Junxiong Gao,Suling Zhao,Zhihong Wang,Huizhong Zeng
DOI: https://doi.org/10.1080/10584580601085545
2006-01-01
Integrated Ferroelectrics
Abstract:ABSTRACT The multilayer PbTiO3/PbZr0.3Ti0.7O3/PbTiO3(PT/PZT/PT) thin films were prepared by a Sol-Gel method on the Pt(111)/Ti/SiO2/Si(100) substrate for FeRAM application. The XRD patterns exhibits a perfect perovskite-phase with strong (111)-preferred orientation. The domain structures were investigated by scanning force microscopy. The out-of-plane polarization (OPP), in-plane polarization (IPP), the OPP amplitude and OPP phase images were obtained. The domain of the films has a complex structure with c-domain and deviated—c-domain which direction deviated from the vertical direction of surface of the film. The complex domain structure is related to the orientation of the crystal grains in the film. The results of ferroelectric, fatigue, dielectric and leakage current density indicate that the thin film has a better property. It has larger saturation polarization P max of 57.6 μ C/cm2 at an applied voltage of 10 V, higher remnant polarization P r of 32.3 μ C/cm2 for a the conceive voltage (Vc) of 2.5 V. After 1010 cycles, it still has more than 80% remnant polarization. The dielectric constants decreased with the frequency increased, and the decrease became slightly up to 1 MHz. The dielectric loss increased with the frequency increased, and there are no abrupt changes in the scan region. The leakage current mechanism of the thin film can be modeled in terms of SCLC theory.