Fabrication And Properties Of Ru/Pb(Zr0.4ti0.6)O-3/Pt Capacitor

HONG HU,ZE JIA,TIAN-ZHI LIU,DAN XIE,ZHI-GANG ZHANG,TIAN-LING REN,LI-TIAN LIU

DOI: https://doi.org/10.1080/10584580601086899

2006-01-01

Integrated Ferroelectrics

Abstract:Pb(Zr,Ti)O-3 (PZT) deposited on platinum(Pt)/titanium(Ti)/SiO2/Si substrates is applied to ferroelectric capacitors with ruthenium (Ru) as the top electrodes. The PZT films are prepared by sol-gel spin coating method and etched by Ion reactive etching (IRE). The Pt and Ru films as electrodes are both prepared by DC sputtering and etched by Ion Beam Etching (IBE). The properties of the ferroelectric capacitor such hysteresis loops, fatigue, leakage and coercive voltage shift are investigated. After 10(10) switch cycles, the remanent polarization of the Ru/PZT/Pt capacitor decreases to approximate 70%. The leakage current density increases obviously when the capacitor with more than 10(8) switch cycles is at positive bias. Under different bias voltage, the coercive voltage shift values of Ru/PZT/Pt capacitor at room temperature are different, and the change rate of coercive voltage shift quickens with the increasing positive bias voltage. These properties can be explained by the behaviors and properties of the PZT/electrode interface.