Abstract:Annealing Pb(Zr1-xTix)O3 (PZT) thin films in the hydrogen ambient can result in the unacceptable degradation of ferroelectric properties due to interaction of H2 forming gas with the ferroelectric materials. Since the understanding of this degradation mechanism is limited, this issue arouses a big problem for the application of PZT in high-density non-volatile ferroelectric random access memories (NVFRAM). In order to resolve this problem, we investigate Pt/PZT/Pt capacitors before and after H2 annealing at various temperatures. The capacitors lost their ferroelectric properties during hydrogen annealing. The measurements of polarization hysteresis loops and leakage currents suggest that there are different degradation mechanisms for the reduced PZT films. Although hydrogen induced degradation can be partially recovered by post-annealing of the thin films in the O2 ambient, all the remanent polarizations after recovery are much smaller than their virgin values, which indicates the irreversible damage of the ferroelectricity during the forming gas annealing (FGA) process. In order to investigate the degradation mechanism, X-ray diffraction was performed before and after FGA, and atomic force microscopy images were taken to observe the topograghy and microstructure changes. A conductive Pt-coated piezoelectric force microscope probe was used as a mobile top electrode to check ferroelectric and piezoelectric properties within microregions of PZT films before and after FGA.

Gamma-Ray Total Dose Radiation Effects of Pt/Pbzr0.52ti0.48/Pt and Au/Pbtio3/Yba2cu3o7-Delta Ferroelectric Capacitors

Total dose radiation effects of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-δ capacitors

Total Dose Radiation Effects of Au/Pbzr0.52ti0.48o3/Yba2cu3o7-Delta/Laalo3 Ferroelectric Capacitors

Ferroelectric Characteristics of and Capacitors in a Radiation Environment

Characteristics of Pt/PbZr0.52Ti0.48O3/Pt and Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-δ capacitors after γ-ray irradiation

Total dose radiation effects of Au/PbZr0.52Ti0.48O3/YBa2Cu 3O7-δ/LaAlO3 ferroelectric capacitors

Total Dose Radiation Effects of Pt/Pzt/Pt Ferroelectric Capacitors Fabricated by Pld Method

Characteristics of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-delta Capacitors Fabricated on LaAlO3 and Y2O3-stabilized ZrO2 Substrates During Irradiation

γ-ray irradiation effects of Au/PbTiO3/YBa2Cu3O7−δ capacitors under different bias voltage

Γ RAY TOTAL IRRADIATION DOSE EFFECTS OF Pt/PZT/Pt CAPACITORS

Gamma-Ray Irradiation Effect On Hysteresis Symmetry And Data Retention Of Pt/Srbi2ta2o9/Pt Thin-Film Capacitors

Γ-Ray Irradiation Effect on Hysteresis Symmetry and Data Retention of Pt/SrBi2Ta2O9/Pt Thin-Film Capacitors

Properties of Ferroelectric Capacitor YBCO/Pb (Ta0.05Zr0.48Ti0.47) O3/YBCO/Pt/TiO2/SiO2/Si

Fabrication And Properties Of Ru/Pb(Zr0.4ti0.6)O-3/Pt Capacitor

Impact of Total Ionizing Dose Irradiation on Pt/SrBi2Ta2O9/HfTaO/Si Memory Capacitors

Degradation And Recovery Of Polarization Under Gamma Rays In Bi3.15nd0.85ti3o12 Ferroelectric Capacitors

Mechanism of High Temperature Hydrogen Reduced Polarization Degradation in Pb(Zr1−xTix)O3 Ferroelectric Thin Film Capacitors

Comparison Of Properties Of Pt/Pzt/Pt And Ru/Pzt/Pt Ferroelectric Capacitors

Effect of metal electrodes on the steady-state leakage current in PZT thin film capacitors

DEGRADATION AND RECOVERY OF POLARIZATION UNDER γ RAYS IN Bi<sub>3.15</sub>Nd<sub>0.85</sub>Ti<sub>3</sub>O<sub>12</sub> FERROELECTRIC CAPACITORS