Abstract:Annealing Pb(Zr1-xTix)O3 (PZT) thin films in the hydrogen ambient can result in the unacceptable degradation of ferroelectric properties due to interaction of H2 forming gas with the ferroelectric materials. Since the understanding of this degradation mechanism is limited, this issue arouses a big problem for the application of PZT in high-density non-volatile ferroelectric random access memories (NVFRAM). In order to resolve this problem, we investigate Pt/PZT/Pt capacitors before and after H2 annealing at various temperatures. The capacitors lost their ferroelectric properties during hydrogen annealing. The measurements of polarization hysteresis loops and leakage currents suggest that there are different degradation mechanisms for the reduced PZT films. Although hydrogen induced degradation can be partially recovered by post-annealing of the thin films in the O2 ambient, all the remanent polarizations after recovery are much smaller than their virgin values, which indicates the irreversible damage of the ferroelectricity during the forming gas annealing (FGA) process. In order to investigate the degradation mechanism, X-ray diffraction was performed before and after FGA, and atomic force microscopy images were taken to observe the topograghy and microstructure changes. A conductive Pt-coated piezoelectric force microscope probe was used as a mobile top electrode to check ferroelectric and piezoelectric properties within microregions of PZT films before and after FGA.

Degradation And Recovery Of Polarization Under Gamma Rays In Bi3.15nd0.85ti3o12 Ferroelectric Capacitors

DEGRADATION AND RECOVERY OF POLARIZATION UNDER γ RAYS IN Bi<sub>3.15</sub>Nd<sub>0.85</sub>Ti<sub>3</sub>O<sub>12</sub> FERROELECTRIC CAPACITORS

Gamma-Ray Irradiation Effect On Hysteresis Symmetry And Data Retention Of Pt/Srbi2ta2o9/Pt Thin-Film Capacitors

Γ-Ray Irradiation Effect on Hysteresis Symmetry and Data Retention of Pt/SrBi2Ta2O9/Pt Thin-Film Capacitors

Investigation on Annealing and Etching Effects for Pt/Bi3.15nd0.85ti3o12/Pt Ferroelectric Capacitors

Aging Behavior And Recovery Of Polarization In Sr0.8bi2.4ta2o9 Thin Films

Ferroelectric Characteristics of and Capacitors in a Radiation Environment

Gamma-Ray Total Dose Radiation Effects of Pt/Pbzr0.52ti0.48/Pt and Au/Pbtio3/Yba2cu3o7-Delta Ferroelectric Capacitors

Remanent Polarization Reduction with Enhanced Temperature in Ferroelectric Thin Films

Properties of Ferroelectric Capacitor YBCO/Pb (Ta0.05Zr0.48Ti0.47) O3/YBCO/Pt/TiO2/SiO2/Si

Characteristics of Pt/PbZr0.52Ti0.48O3/Pt and Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-δ capacitors after γ-ray irradiation

Structure and Electrical Properties of Bi3.15nd0.85ti3o12 Ferroelectric Thin Films

Large Remanent Polarization and Low Leakage Current in High-<i>T<sub>c</sub> </i>0.2Bi (Ni<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub>-0.8PbTiO<sub>3</sub> Ferroelectric Thin Films

Large Remanent Polarization and Low Leakage Current in High-Tc 0.2Bi (Ni1/2Ti1/2)O3-0.8PbTiO3 Ferroelectric Thin Films

Mechanism of High Temperature Hydrogen Reduced Polarization Degradation in Pb(Zr1−xTix)O3 Ferroelectric Thin Film Capacitors

The Growth of Interfacial Passive Layers under Thermal Passivation of Integrated Pb(Zr,Ti)O-3 Thin Films

Progressive Loss of Ferroelectricity under Bipolar Pulsed Fields and Experimental Determination of Non-Switchable Polarization in Au/Ba0.5Sr0.5-TiO3/SrRuO3 Thin-Film Capacitors

Total Dose Radiation Effects of Au/Pbzr0.52ti0.48o3/Yba2cu3o7-Delta/Laalo3 Ferroelectric Capacitors

Switching Kinetics of Neodymium-Modified Bi4ti3o12 Thin Films

Microstructure And Ferroelectric Properties Of Sol-Gel Derived Bi3.15nd0.85ti3o12 Thin Films On Pt/Ti/Sio2/Si(100)

Effect of Ultra-Violet Irradiation on Srbi2ta2o9 Thin Film Capacitors