Abstract:A single crystal of lead-zirconate-titanate (PZT), composition Pb(Zr0.80Ti0.20)O3, was studied by polarized-Raman scattering as a function of temperature. Raman spectra reveal that the local structure deviates from the average structure in both ferroelectric and paraelectric phases. We show that the crystal possesses several, inequivalent complex domain boundaries which show no sign of instability even 200 K above the ferroelectric-to-paraelectric phase transition temperature TC. Two types of boundaries are addressed. The first boundary was formed between ferroelectric domains below TC. This boundary remained stable up to the highest measurement temperatures, and stabilized the domains so that they had the same orientation after repeated heating and cooling cycles. These domains transformed normally to the cubic paraelectric phase. Another type of boundary was formed at 673 K and exhibited no signs of instability up to 923 K. The boundary formation was reversible: it formed and vanished between 573 and 673 K during heating and cooling, respectively. A model in which the crystal is divided into thin slices with different Zr/Ti ratios is proposed. The physical mechanism behind the thermal-stress-induced structural changes is related to the different thermal expansion of the slices, which forces the domain to grow similarly after each heating and cooling cycle. The results are interesting for non-volatile memory development, as it implies that the original ferroelectric state can be restored after the material has been transformed to the paraelectric phase. It also suggests that a low-symmetry structure, stable up to high-temperatures, can be prepared through controlled deposition of layers with desired compositions.

The Growth of Interfacial Passive Layers under Thermal Passivation of Integrated Pb(Zr,Ti)O-3 Thin Films

Remanent Polarization Reduction with Enhanced Temperature in Ferroelectric Thin Films

Interfacial-Layer Modulation Of Domain Switching Current In Ferroelectric Thin Films

Polarization fatigue of ferroelectric Pb(Zr_xTi_(1-x_)O_3 thin films revisited

Charge Injection and Polarization Fatigue in Ferroelectric Thin Films

Polarization Fatigue Of Ferroelectric Pb(Zr0.1ti0.9)O-3 Thin Films: Temperature Dependence

Temperature-dependent Polarization Back-Switching and Dielectric Nonlinearity in PbZr0.4Ti0.6O3 Ferroelectric Thin Films

Effects of Thickness on the Polarization States in Epitaxial Ferroelectric Thin Films

Mechanism of High Temperature Hydrogen Reduced Polarization Degradation in Pb(Zr1−xTix)O3 Ferroelectric Thin Film Capacitors

Polarization loop deformations of an oxygen deficient Pb(Zr0.25,Ti0.75)O3 ferroelectric thin film

Evaluation of Interfacial-Layer Capacitance from Fast Polarization Retention in Ferroelectric Thin Films

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

Enhanced Ferroelectric Properties Of Pb(Ta0.05zr0.48ti0.47)O-3 Thin Films On Pt/Tio2/Sio2/Si Substrates Using La0.67sr0.33mno3 Buffer Layers

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 Ns to 1 S

Temperature Dependent Polarization Switching Properties Of Ferroelectric Pb0.92la0.08zr0.52ti0.48o Delta Films Grown On Nickel Foils

Fatigue Behaviors Of Bi3.25la0.75ti3o12/Pb(Zr0.52ti0.48)O-3/Bi3.25la0.75ti3o12 Trilayered Thin Films

Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

Aging Behavior And Recovery Of Polarization In Sr0.8bi2.4ta2o9 Thin Films

Thermal Induced P r Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism

Ferroelectric Properties of Bilayer Structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) Thin Films on Pt/TiO2/SiO2/Si Substrates