Abstract:A novel in situ biasing approach has facilitated atomic‐level observation of domain wall translational features in PZT/LSMO heterojunction via precise electric field control. The study uncovers a unique domain wall creeping behavior with morphology variation, driven by the competition between gradient, elastic, and electrostatic energies. These findings advance a fundamental understanding of domain wall properties and potential modulation in practical devices. As a promising candidate for next‐generation nonvolatile memory devices, ferroelectric oxide films exhibit many emergent phenomena with functional applications, making understanding polarization switching and domain evolution behaviors of fundamental importance. However, tracking domain wall motion in ferroelectric oxide films with high spatial resolution remains challenging. Here, an in situ biasing approach for direct atomic‐scale observations of domain nucleation and sideways motion is presented. By accurately controlling the applied electric field, the lateral translational speed of the domain wall can decrease to less than 2.2 Å s−1, which is observable with atomic resolution STEM imaging. In situ observations on a capacitor structured PbZr0.1Ti0.9O3/La0.7Sr0.3MnO3 heterojunction demonstrate the unique creeping behavior of a domain wall under a critical electric field, with the atomic structure of the creeping domain wall revealed. Moreover, the evolution of the metastable domain wall forms an elongated morphology, which contains a large proportion of charged segments. Phase‐field simulations unveil the competition between gradient, elastic, and electrostatic energies that decide this unique domain wall creeping and morphology variation. This work paves the way toward a complete fundamental understanding of domain wall physics and potential modulations of domain wall properties in real devices.

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 Ns to 1 S

Enhanced Dielectric Nonlinearity with Controlled Domain Nucleation in Ferroelectric Thin Films

Charge Injection Controlled Capacitance Degradation in Ferroelectric Thin Films

Nanosecond-range Imprint and Retention Characterized from Polarization-Voltage Hysteresis Loops in Insulating or Leaky Ferroelectric Thin Films

Interfacial-Layer Modulation Of Domain Switching Current In Ferroelectric Thin Films

Nonlinear Antiferroelectric-Like Capacitance-Voltage Curves in Ferroelectric Bifeo3 Thin Films

Micro-/Macro-Responses of A Ferroelectric Single Crystal with Domain Pinning and Depinning by Dislocations

Simultaneous dynamic characterization of charge and structural motion during ferroelectric switching

Subpicosecond Domain Switching In Discrete Regions Of Pb(Zr0.35ti0.65)O3 Thick Films

Atomic-scale observations of electrical and mechanical manipulation of topological polar flux closure

Coexisting Depinning Effect of Domain Walls During the Fatigue in Ferroelectric Thin Films

Charge Injection and Polarization Fatigue in Ferroelectric Thin Films

Electric-Field-Driven Nanosecond Ferroelastic-Domain Switching Dynamics in Epitaxial Pb(Zr,Ti)O_{3} Film

Imaging the Collapse of Macrodomains from Coupling Defect-Dipole Relaxation

In Situ Observation of Domain Wall Lateral Creeping in a Ferroelectric Capacitor

The Technique to Characterize Irreversible Domain Motion in Ferroelectric Thin Films in A Large Time Scale

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Memory Effect of Charge Injection Induced by Polarization Reversal in Pt/SrBi2Ta2O9/Pt Thin-Film Capacitors Identified from Fast Capacitance–voltage Sweeping Curves

Estimation of Film-Electrode Contact Resistance and Domain Switching Time from Ferroelectric Polarization-Voltage Hysteresis Loops

Remanent Polarization Reduction with Enhanced Temperature in Ferroelectric Thin Films