Abstract:Binary data in 1T1C or 2T2C non-volatile ferroelectric random access memories, which are represented by the polarization charges of switching and non-switching events, are retrieved when a reading current pulse exceeds the sense amplifier threshold for discrimination of nonswitching pulses, and a reset pulse is required after the destructive readout. Downscaling the dimensions of such memory cells reduces the measurable polarization charge proportional to the capacitor area, and data are no longer detected reliably in high-density memories. The nondestructive readout of the binary information is possible from the high- and low-conductance bipolar switching of a ferroelectric diode under two opposite poling fields, where the direction of the diode effect switches with polarization reversal. Our study of BiFeO3 thin-film capacitors shows measured polarization-modulated diode currents for encoding information within high-density memories. We used two in-plane nano-electrodes fabricated on the film surface in gaps of a few tens of nanometers. As an in-plane field is applied antiparallel to the domain orientation above a coercive field, the partial domains near the film surface layer are switched firstly to form conductive charged walls with respect to the underlying unswitched bulk matrix, so that we can observed an "on" current from current-voltage loops. As the switching field is high enough, the underlying domains throughout the whole film thickness are switched. In this case, there was no charged domain wall, and thus, we observed an "off' current. Both "on" and "off' currents with the ratio of 100 are stable over laboratory time with write cycles larger than 2x10(5) and write time as short as 10 ns, which provide the proof of ferro-resistive switching and independent adjustments of ferroelectricity and conductivity in a single-phase ferroelectric in promotion of the integration density of the memory with high performance.

Nanosecond-range Imprint and Retention Characterized from Polarization-Voltage Hysteresis Loops in Insulating or Leaky Ferroelectric Thin Films

Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O 3 Thin Films

Estimation of Film-Electrode Contact Resistance and Domain Switching Time from Ferroelectric Polarization-Voltage Hysteresis Loops

Nanosecond-range Measurements of Imprint Effect for Pt∕IrO2∕Pb(Zr0.4Ti0.6)O3∕IrO2∕Pt Thin-Film Capacitors

The Improved Polarization Retention Through High-Field Charge Injection in Highly Strained Bifeo3 Thin Films with Preferred Domain Orientations

Polarization Retention Dependence of Imprint Time Within LiNbO3 Single-Crystal Domain Wall Devices

Domain Switching Kinetics in Ferroelectric-Resistive BiFeO3 Thin Film Memories

Multilevel hysteresis loop engineered with ferroelectric nano-metamaterials

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 Ns to 1 S

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

Nonlinear Antiferroelectric-Like Capacitance-Voltage Curves in Ferroelectric Bifeo3 Thin Films

Subpicosecond Domain Switching In Discrete Regions Of Pb(Zr0.35ti0.65)O3 Thick Films

Formulization of Long-Time Domain Switching Around the Coercive Field from Imprint Measurements on Ferroelectric Thin Films

Interfacial-Layer Modulation Of Domain Switching Current In Ferroelectric Thin Films

Tracking intrinsic ferroelectric switching under electric field via operando second harmonic generation

An Analysis of Imprinted Hysteresis Loops for a Ferroelectric Pb(Zr,Ti)O3 Thin Film Capacitor Using the Switching Transient Current Measurements

The Technique to Characterize Irreversible Domain Motion in Ferroelectric Thin Films in A Large Time Scale

High-Desity Nonvolatile Ferroelectric Resisitive Memory

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors

The Technique to Symmetrize Domain Switching Hysteresis Loops in LiNbO3 Domain-Wall Nanodevices with Improved Polarization Retention