Abstract:We fabricated (00/) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 angstrom and ferroelectric polarization of 82 mu C/cm(2) for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 angstrom and 51 mu C/cm(2) for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (P-f-V-f) hysteresis loops in both semiconducting thin films. P-f-V-f hysteresis loops after 1 mu s-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K. (C) 2015 The Japan Society of Applied Physics

The Improved Polarization Retention Through High-Field Charge Injection in Highly Strained Bifeo3 Thin Films with Preferred Domain Orientations

Improved polarization retention in epitaxial BiFeO 3 thin films induced by strain relaxation

Influence Of Depolarization Field On Polarization States In Epitaxial Ferroelectric Thin Films With Nonequally Biaxial Misfit Strains

Domain Switching Dynamics for ImClO4 Molecular Ferroelectric Thin Films

Improved Polarization Retention of BiFeO$_{3}$ Thin Films Using GdScO$_{3}$ (110) Substrates

Charge Injection and Polarization Fatigue in Ferroelectric Thin Films

Nanosecond-range Imprint and Retention Characterized from Polarization-Voltage Hysteresis Loops in Insulating or Leaky Ferroelectric Thin Films

Polarization Fatigue of Bifeo3 Films with Ferromagnetic Metallic Electrodes

Ferroelectric Polarization and Defect-Dipole Switching in an Epitaxial (111) BiFeO3 Thin Film

Polarization behavior of` lead-free 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 thin films with enhanced ferroelectric properties

Robust in-plane polarization switching in epitaxial BiFeO3 films

Polarization loop deformations of an oxygen deficient Pb(Zr0.25,Ti0.75)O3 ferroelectric thin film

Nonlinear Antiferroelectric-Like Capacitance-Voltage Curves in Ferroelectric Bifeo3 Thin Films

Domain Structure and In-Plane Switching in a Highly Strained Bi0.9Sm0.1FeO3 Film

The technique to symmetrize domain switching hysteresis loops in LiNbO 3 domain-wall nanodevices with improved polarization retention

Bimodal polymorphic nanodomains in ferroelectric films for giant energy storage

Electrical and Mechanical Switching of Ferroelectric Polarization in the 70 Nm Bifeo3 Film

Increasing Energy Storage Capabilities of Space-Charge Dominated Ferroelectric Thin Films Using Interlayer Coupling

Domain Switching Kinetics in Ferroelectric-Resistive BiFeO3 Thin Film Memories

The Technique to Symmetrize Domain Switching Hysteresis Loops in LiNbO3 Domain-Wall Nanodevices with Improved Polarization Retention

Multi-step Domain Switching and Polarization Fatigue in [110]-Oriented 0.67Pb(mg1/3nb2/3)o3-0.33Pbtio3 Single Crystals