Abstract:As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control knob: polarization switching by an applied electric field. Due to the rhombohedral symmetry of BiFeO3, there are four ferroelastic variances and three different polarization switching events: (1) 71° switching from r1- to r3+, (2) 109° switching from r1- to r2+ (or r4+), and (3) 180o switching from r1- to r1+ (the superscript + and - stand for up and down polarization, respectively). Each switching path is coupled to a different reorientation of the BiFeO3 unit cell, and hence different coupling to the magnetic order as well as different magnitudes of switchable polarization. A degradation of the ferroelectric properties of BiFeO3 will result in losing controllability of magnetic order switching in magnetoelectric devices and capacity for information storage in ferroelectric memory devices. Especially, polarization fatigue will directly restrict the reliability of the actual devices. Hence it is important to understand the intrinsic fatigue behavior of each polarization switching path in BiFeO3 thin films. In this communication, we report polarization fatigue in BiFeO3 depending on switching path, and propose a fatigue model which will broaden our understanding of the fatigue phenomenon in low-symmetry materials.

Polarization Fatigue of Bifeo3 Films with Ferromagnetic Metallic Electrodes

Mechanism of polarization fatigue in BiFeO 3

Polarization Fatigue Of Pr And Mn Co-Substituted Bifeo3 Thin Films

Nature of polarization fatigue in BiFeO3

Ferroelectric Fatigue and Polarization Hysteresis Behavior of a [001]c Pb(In0.5Nb0.5)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystal

Polarization screening-induced epitaxial growth and interfacial magnetism of BiFeO<sub>3</sub>/PbTiO<sub>3</sub>nanoplates

Ferroelectric Properties of Mn-Substituted Bifeo3 Thin Film on Ir Electrodes

Comparative Studies on Ferroelectric Properties of Mn-Substituted Bifeo3 Thin Films Deposited on Ir and Pt Electrodes

Ferroelectric Polarization Induced Selective Growth of BiFeO3 Nanocrystals with a Remarkable Ferromagnetism

Interfacial effects on the polarization of $BiFeO_{3}$ films

Thickness Dependences of Polarization Characteristics in Mn-Substituted Bifeo3 Films on Pt Electrodes

Synthesis And Ferroelectric Properties Of Bifeo3 Thin Films Grown By Sputtering

Improved polarization retention in epitaxial BiFeO 3 thin films induced by strain relaxation

Electrical and Mechanical Switching of Ferroelectric Polarization in the 70 Nm Bifeo3 Film

Polarization fatigue of ferroelectric Pb(Zr_xTi_(1-x_)O_3 thin films revisited

Ion Dopants Tuning the Interband Electronic Structure for Huge Saturated Ferroelectric Polarization in Bismuth Ferrite Films

Nanofragmentation of Ferroelectric Domains During Polarization Fatigue

The Improved Polarization Retention Through High-Field Charge Injection in Highly Strained Bifeo3 Thin Films with Preferred Domain Orientations

Mechanism of Polarization Fatigue in BiFeO3: the Role of Schottky Barrier

Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films

Polarization Switching and Fatigue Characteristics of Highly (117)-Oriented Bi3.15nd0.85ti2.99mn0.01o12 Ferroelectric Thin Films at Both Low and Elevated Temperatures