Ferroelectric Polarization and Defect-Dipole Switching in an Epitaxial (111) BiFeO3 Thin Film

Boyuan Zhao,Zhihui Chen,Jianwei Meng,Hongliang Lu,David Wei Zhang,Anquan Jiang
DOI: https://doi.org/10.1063/1.4921808
IF: 2.877
2015-01-01
Journal of Applied Physics
Abstract:The time and field control of defect-dipole alignment as well as ferroelectric polarization switching has been investigated in an epitaxial BiFeO3 thin film. Under electric field poling, a double hysteresis loop arising from individual ferroelectric domain switching and defect dipole alignment can be artificially induced after one long enough pre-poling time. Meanwhile, the alignment of defects dipoles can increase the leakage current of the film. The activation field for the defect dipole alignment is extracted to be around 192 MV/m. These results demonstrate the possibility of strengthened polarization contributed by defect dipole poling in ferroelectric thin films.
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