Abstract:Exploring Nanocavity‐Assisted Mechanical Switching in PbTiO3 Thin Films using Phase‐Field Simulations. Stability diagrams highlight diverse outcomes influenced by cavity sizes, locations, permittivity, and tip‐induced forces, revealing the requirements to stable nanocavity‐assisted mechanical switching. Ferroelectric thin films hold significant promise in various nanoelectronic applications, demanding precise control over their domain structures. While electrical field‐driven polarization switching is currently employed, it often leads to undesirable side effects. In contrast, mechanical switching offers a voltage‐free alternative but faces challenges in thicker films. Recent breakthroughs have demonstrated stable mechanical switching in films up to 200 nm thick, attributed to the presence of nanocavities. These nanoscale voids are believed to facilitate domain transitions, serving as essential pinning centers. In this study, mechanical domain switching in thick ferroelectric films is investigated using phase‐field modeling, with a specific focus on evaluating the influence of nanocavities on domain stability. The effects of cavity parameters (size, depth, and dielectric properties) on mechanical switching stability under various applied pressures are systematically examined. The findings reveal the intricate interplay between these factors and outline the conditions for stable mechanical switching. Furthermore, phase‐field simulations are employed to showcase the energetic mechanisms governing nanocavity‐assisted mechanical switching, while also highlighting the pivotal role of these defects as pinning centers. This investigation elucidates the nanocavity‐assisted mechanical control of polarization and the potential for optimizing thin film design through nanocavity engineering, thus enabling mechanical switching across substantial film thicknesses.

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Phase field simulations of polarization switching-induced toughening in ferroelectric ceramics

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Phase-field Simulations of Ferroelectric/ferroelastic Polarization Switching

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Domain Switching Dynamics for ImClO4 Molecular Ferroelectric Thin Films

Phase Field Analysis of Crack Tip Parameters in Ferroelectric Polycrystals under Large-Scale Switching

Phase field simulations of a permeable crack parallel to the original polarization direction in a ferroelectric mono-domain

Ferroelectric Domain Switching Pathways—from Grain Boundary to Grain Body

Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O3 Thin Films

Partial Ferroelastic Domain Mediated Ferroelectric Domain Switching

Switching Behavior of Ferroelectric Thin Films with Deadlayers

Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO3 Thin Films

Size Effects In Epitaxial Ferroelectric Islands And Thin Films

Phase-field Simulation of Domain Evolution in Ferroelectric Thin Films with Deadlayers

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching

Revealing the Role of Defects in Ferroelectric Switching with Atomic Resolution.