Partial Ferroelastic Domain Mediated Ferroelectric Domain Switching

Yi. Zhang,Linze Li,Yinghao Chu,Xiaoqing Pan
DOI: https://doi.org/10.1017/s1431927617008789
IF: 4.0991
2017-01-01
Microscopy and Microanalysis
Abstract:The fundamental understanding of domain switching in ferroelectric thin films is critical for the development of ferroelectric devices. In ferroelectric PbZr0.2Ti0.8O3 (PZT) thin films, full ferroelastic adomains extending to the film surface are frequently observed. These a-domains can significantly affect the ferroelectric switching behaviors in the local nanoregions surrounding them. For example, it has been observed that full a-domains in tetragonal PZT thin films can hinder the motion of 180° domain walls by forming charged ferroelastic domain walls, leading to incomplete domain switching [1]. On the other hand, partial a-domain terminating beneath the film surface can also exist in PZT films. However, the domain switching behaviors mediated by these partial a-domain areas are not elucidated yet.
What problem does this paper attempt to address?