Abstract:Ferroelectric materials often possess defects, such as notches and voids. They are also brittle and susceptible to cracking at all scales ranging from electric domains to devices. Under mechanical and electrical loadings, the intensified stresses and electric fields in the vicinity of notches or voids may cause polarization switching in ferroelectric materials. Due to the polarization switching, the linear piezoelectric fracture mechanics cannot predict the nonlinear fracture behavior of ferroelectrics under mechanical and electrical loadings. To investigate the polarization switching and the nonlinear behavior of ferroelectrics, a three-dimensional nonlinear finite element model for ferroelectric materials is developed based on a principle of virtual work. The finite element model includes three physical fields, namely the polarization field, electric field and strain field, and the coupling between them. The developed finite element model is employed to investigate the polarization distribution near an impermeable notch in a ferroelectric single domain subjected to mechanical and electrical loadings. It is found that the polarization switching takes place near the notch tip if the mechanical loadings exceed a critical value. Furthermore, the simulation results show that an electric field parallel to the initial polarization increases the critical value while an electric field antiparallel to the initial polarization decreases it. In the simulation, we do not make any prior assumptions, i.e. without any switching criterion, on the polarization switching. The polarization switching is a result of the minimization of the total energy in the simulated ferroelectrics.

Switching Behavior of Ferroelectric Thin Films with Deadlayers

Phase-field Simulation of Domain Evolution in Ferroelectric Thin Films with Deadlayers

Effect Of Strain And Deadlayer On The Polarization Switching Of Ferroelectric Thin Film

Size Effects In Epitaxial Ferroelectric Islands And Thin Films

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Domain Switching Dynamics for ImClO4 Molecular Ferroelectric Thin Films

Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

Three-dimensional finite element modeling of polarization switching in a ferroelectric single domain with an impermeable notch

Micro-/Macro-Responses of A Ferroelectric Single Crystal with Domain Pinning and Depinning by Dislocations

Phase-field Simulations of Ferroelectric/ferroelastic Polarization Switching

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

On Ferroelectric Domain Polarization Switching Mechanism Subject to an External Electric Field by Simulations with the Phase-Field Method

Interfacial-Layer Modulation Of Domain Switching Current In Ferroelectric Thin Films

Interdomain Screening Effect in Multidomain Ferroelectric Thin Film and Its Impact on Polarization Switching

Domain Size and Charge Defects Affecting the Polarization Switching of Antiferroelectric Domains

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

The Creep Process Of The Domain Switching In Poly(Vinylidene Fluoride-Trifluoroethylene) Ferroelectric Thin Films

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Dynamic Process of Domain Switching in Ferroelectric Films

Simulations of domain switching in ferroelectrics by a three-dimensional finite element model

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films