Abstract:Generally, the ferroelectric capacitance under a d.c. voltage drops continuously with time, and the shape of capacitance–voltage (C–V) loops within a sweeping time more than 1 s resemble a butterfly, in comparison to the double-butterfly shape of an antiferroelectric. In this work, we developed a measuring technique for shortening sweeping time down to 500 ns for the rapid study of dielectric relaxation in ferroelectric Pb(Zr,Ti)O3 thin films. It is interestingly found that the traditional butterfly loops of a ferroelectric degenerate into double butterfly loops of an antiferroelectric when the sweeping time is sufficiently short, providing evidence of the nonlinear dielectric contribution of reversible domain motion. Reversible domains can align along a field under a voltage, but reverses back immediately into their previous directions under a reduced field strength to release their polarization charges, similarly to antiferroelectric domains. When the voltage stressing time is sufficiently long, the internal field for driving reversible domain motion is temporally screened by the injected charges accumulated in regions with different polarizations, dielectric permittivities, and conductivities (domain pinning), which results in time-dependent dielectric degradation. This charge injection is different from the traditional model of defect motion with a low mobility. Finally, we showed evidence of the charge injection from the imprint profile and reversible domain freezing into irrecoverable domains upon cooling.

Imaging the Collapse of Macrodomains from Coupling Defect-Dipole Relaxation

Micro-/Macro-Responses of A Ferroelectric Single Crystal with Domain Pinning and Depinning by Dislocations

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 Ns to 1 S

Domain Switching Emission from the Mixed-Mode Crack in Ferroelectrics by Birefringence Measurement and Phase Field Modeling

The Jumping Dielectric Breakdown Behavior Induced by Crack Propagation in Ferroelectric Materials: A Phase Field Study

Simultaneous dynamic characterization of charge and structural motion during ferroelectric switching

In situ Transmission Electron Microscopy Studies of Electric-field-induced Phenomena in Ferroelectrics

Scanning Probe Microscopy Study of the Domain Growth in Relaxor Ferroelectrics

Nondestructive Imaging of Dielectric-Constant Profiles and Ferroelectric Domains with a Scanning-Tip Microwave Near-Field Microscope

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Mechanical and dielectric investigation on point defects and phase transition in ferroelectric ceramics

Phase-field modeling of the coupled domain structure and dielectric breakdown evolution in a ferroelectric single crystal.

Phase Transition Effect on Ferroelectric Domain Surface Charge Dynamics in BaTiO 3 Single Crystal.

Atomic Imaging of Mechanically Induced Topological Transition of Ferroelectric Vortices

Avalanches during ferroelectric and ferroelastic switching in barium titanate ceramics

Domain Dynamics During Ferroelectric Switching

An Abnormal Dielectric Relaxation Phenomenon Observed In Pbzr(0.38)Ti(0.62)O(3) Multilayers

Oxygen-vacancy-induced Memory Effect and Large Recoverable Strain in a Barium Titanate Single Crystal

Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy

Correlation Between Nanoscale and Nanosecond Resolved Ferroelectric Domain Dynamics and Local Mechanical Compliance