Intrinsic 90° charged domain wall and its effects on ferroelectric properties
Pingan Zhou,Binjian Zeng,Wanzhen Yang,Jiajia Liao,Fanqi Meng,Qinghua Zhang,Lin Gu,Shuaizhi Zheng,Min Liao,Yichun Zhou
DOI: https://doi.org/10.1016/j.actamat.2022.117920
IF: 9.4
2022-06-01
Acta Materialia
Abstract:The domain is an important characteristic of ferroelectric materials, and the type of domain can have significant effects on the performance of ferroelectric materials. In particular, the unique wake-up and fatigue effects of Hf0.5Zr0.5O2 (HZO) films severely restrict improvements in terms of film performance. Recently, using integrated differential phase contrast (iDPC) scanning transmission electron microscopy (STEM) imaging, we observed the existence of intrinsic tail-to-tail 90° domain structures, charged domain walls (CDWs), and polarization relaxation on the TiN/HZO/TiN interfaces of HZO films. Based on this experimental investigation, we establish a phase-field model of the tail-to-tail 90°CDWs based on the time-dependent Ginzburg–Landau equation. In our model, the tail-to-tail 90°CDW affects the mesoscopic domain switching through a built-in electric field, which, in turn, affects the macroscopic ferroelectric properties of the thin film. The following conclusions are drawn: (a) the CDWs that are distributed horizontally or vertically along the thickness of the film cause a A-wake-up effect (antiferroelectric-like wake-up) with double hysteresis loops or a S-wake-up effect (spindle-like wake-up), with thick portions in the middle and both ends points of the hysteresis loop; (b) the S-wake-up caused by the CDWs distributed along the thickness of the film performs badly in fatigue tests and is easier to break down. The model proposed herein reveals the mechanism of the wake-up effect in hafnium oxide-based ferroelectric films. It provides a theoretical basis for the development of a new type of hafnium oxide-based ferroelectric memory system.
materials science, multidisciplinary,metallurgy & metallurgical engineering